C8051T606-GM Silicon Laboratories Inc, C8051T606-GM Datasheet - Page 34

• Manufacturer Part Number: C8051T606-GM
• Description: IC 8051 MCU 1.5K-EEPROM 11-QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051T60xr

Specifications of C8051T606-GM

• Program Memory Type: OTP
• Program Memory Size: 1.5KB (1.5K x 8)
• Package / Case: 11-QFN
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 6
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: C8051T6x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Interface Type: I2C, UART
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 3
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051T606DK
• Minimum Operating Temperature: - 40 C
• Package: 11QFN EP
• Device Core: 8051
• Family Name: C8051T60x
• Maximum Speed: 25 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 336-1668 - CARD DAUGHTER QFN10 SOCKET336-1667 - CARD DAUGHTER MSOP SOCKET336-1666 - KIT DEVELOPMENT FOR C8051T606336-1404 - KIT DEV FOR C8051T60X MCU'S
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1662-5

C8051T600/1/2/3/4/5/6
Table 8.4. Reset Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Table 8.5. Internal Voltage Regulator Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Table 8.6. EPROM Electrical Characteristics
34
Parameter
Input Voltage Range
Bias Current
Parameter
RST Output Low Voltage
RST Input High Voltage
RST Input Low Voltage
RST Input Pullup Current
V
V
Missing Clock Detector 
Timeout
Reset Time Delay
Minimum RST Low Time to
Generate a System Reset
V
V
Parameter
EPROM Size
Write Cycle Time (per Byte)
Programming Voltage (V
Programming Voltage (V
Note: 512 bytes at location 0x1E00 to 0x1FFF are not available for program storage
DD
DD
DD
DD
POR Ramp Time
Monitor Threshold (V
Monitor Turn-on Time
Monitor Supply Current
PP
PP
RST
)
)
Normal Mode
)
C8051T600/1
C8051T602/3
C8051T604/5
C8051T606
C8051T600/1/2/3/4/5
C8051T606
I
V
RST = 0.0 V
Time from last system clock
rising edge to reset initiation
Delay between release of any
reset source and code 
execution at location 0x0000
V
OL
DD
DD
= 8.5 mA, 
= 1.8 V to 3.6 V
= V
Conditions
RST
Conditions
Conditions
- 0.1 V
Rev. 1.2
8192*
4096
2048
1536
0.75 x V
6.25
5.75
Min
105
Min
400
1.7
15
—
—
—
—
—
—
—
Min
1.8
—
DD
Typ
155
6.5
6.0
—
—
—
—
1.75
Typ
625
25
50
20
—
—
—
—
—
—
Typ
30
—
Max
6.75
6.25
205
—
—
—
—
Max
900
0.6
0.6
1.8
50
60
30
—
—
—
Max
1
3.6
50
Units
bytes
bytes
bytes
bytes
µs
Units
V
V
Units
V
µA
ms
µA
µA
µs
µs
µs
µs
V
V
V
V
DD