MC908JL16CFJER Freescale Semiconductor, MC908JL16CFJER Datasheet - Page 35

• Manufacturer Part Number: MC908JL16CFJER
• Description: IC MCU 8BIT 16K FLASH 32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908JL16CFJER

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: I²C, SCI
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 26
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 13x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Controller Family/series: HC08
• No. Of I/o's: 26
• Ram Memory Size: 512Byte
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Digital Ic Case Style: LQFP
• Rohs Compliant: Yes
• Processor Series: HC08JL
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SCI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 26
• Number Of Timers: 4
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908JL16E, M68CBL05CE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 13 Channel
• For Use With: DEMO908JL16E - BOARD DEMO FOR MC908JL16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: MC908JL16CFJERTR

2.5.3 FLASH Page Erase Operation
Use the following procedure to erase a page of FLASH memory. A page consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80 or $XXC0. The 36-byte user interrupt vectors area also
forms a page. Any page within the 16,384 bytes user memory area can be erased alone.
2.5.4 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
Freescale Semiconductor
10. After time, t
10. After time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the page address range desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the FLASH memory address range.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
RCV
RCV
Erase
Erase
(1 µs)
(1 µs)
NVS
NVH
NVS
NVH1
(10 µs).
(10 µs).
(5 µs).
(4 ms).
(4 ms).
,
,
(100 µs).
the memory can be accessed in read mode again.
the memory can be accessed in read mode again.
MC68HC908JL16 Data Sheet, Rev. 1.1
NOTE
NOTE
FLASH Memory
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