DSPIC30F6010-30I/PF Microchip Technology, DSPIC30F6010-30I/PF Datasheet - Page 177

• Manufacturer Part Number: DSPIC30F6010-30I/PF
• Description: IC DSPIC MCU/DSP 144K 80TQFP
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F6010-30I/PF

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 30 MIPs
• Connectivity: CAN, I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LVD, Motor Control PWM, QEI, POR, PWM, WDT
• Number Of I /o: 68
• Program Memory Size: 144KB (48K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 80-TQFP, 80-VQFP
• Core Frequency: 40MHz
• Core Supply Voltage: 5.5V
• Embedded Interface Type: CAN, I2C, SPI, UART
• No. Of I/o's: 68
• Flash Memory Size: 144KB
• Supply Voltage Range: 2.5V To 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: DM300019 - BOARD DEMO DSPICDEM 80L STARTERAC164314 - MODULE SKT FOR PM3 80PFDM300020 - BOARD DEV DSPICDEM MC1 MOTORCTRLAC30F001 - MODULE SOCKET DSPIC30F 80TQFPXLT80PT2 - SOCKET TRANSITION ICE 80TQFPDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: DSPIC30F601030IPF

TABLE 24-11: ELECTRICAL CHARACTERISTICS: BOR
TABLE 24-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
© 2006 Microchip Technology Inc.
DC CHARACTERISTICS
BO10
BO15
Note 1:
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D136
D137
D138
Note 1:
Param
Param
No.
No.
2:
3:
2:
E
V
T
T
I
E
V
V
V
T
T
T
I
I
Symbol
DEW
PEW
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
These parameters are characterized but not tested in manufacturing.
‘11’ values not in usable operating range.
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
DEW
RETD
EB
PEW
RETD
D
DRW
P
PR
PEW
V
V
Symbol
BOR
BHYS
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program FLASH Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
ICSP Block Erase Time
I
I
DD
DD
DD
DD
DD
DD
DD
BOR Voltage
V
low
During Programming
During Programming
During Programming
DD
for Read/Write
for Read
for Bulk Erase
for Erase/Write
Characteristic
transition high to
Characteristic
(2)
on
(2)
(2)
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
BORV = 11
BORV = 10
BORV = 01
BORV = 00
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
100K
V
V
10K
Min
4.5
3.0
40
40
—
—
—
—
—
—
MIN
MIN
(3)
Typ
100K
100
100
1M
10
10
10
—
—
—
—
2
2
4
(1)
4.58
Min
2.6
4.1
—
—
Max
5.5
5.5
5.5
5.5
30
30
30
—
—
—
—
—
—
—
-40°C
-40°C T
Typ
—
—
—
—
5
(1)
-40°C
-40°C
Units
Year
Year
E/W
E/W
mA
mA
mA
ms
ms
ms
V
V
V
V
dsPIC30F6010
T
Max
2.71
4.73
A
A
4.4
—
—
-40 C
Using EECON to read/write
V
voltage
Provided no other specifications
are violated
Row Erase
-40 C
V
voltage
Provided no other
specifications are violated
Row Erase
Bulk Erase
T
T
+85°C for Industrial
+125°C for Extended
A
A
MIN
MIN
Units
+85°C for Industrial
+125°C for Extended
= Minimum operating
= Minimum operating
mV
V
V
V
V
T
T
A
A
Conditions
Not in operating
range
+85°C
+85°C
DS70119E-page 175
Conditions