ATTINY48-PU Atmel, ATTINY48-PU Datasheet - Page 194
![MCU AVR 4K ISP FLASH 1.8V 28-DIP](/photos/7/21/72189/453-28-dip_sml.jpg)
ATTINY48-PU
Manufacturer Part Number
ATTINY48-PU
Description
MCU AVR 4K ISP FLASH 1.8V 28-DIP
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY48-PU
Core Processor
AVR
Core Size
8-Bit
Speed
12MHz
Connectivity
I²C, SPI
Peripherals
Brown-out Detect/Reset, POR, WDT
Number Of I /o
24
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
64 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-DIP (0.300", 7.62mm)
Processor Series
ATTINY4x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
2-Wire/I2S/SPI
Maximum Clock Frequency
12 MHz
Number Of Programmable I/os
28
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
6-ch x 10-bit
Package
28PDIP
Device Core
AVR
Family Name
ATtiny
Maximum Speed
12 MHz
Operating Supply Voltage
2.5|3.3|5 V
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
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21.2.3
21.2.4
194
ATtiny48/88
Chip Erase
Programming the Flash
A Chip Erase must be performed before the Flash and/or EEPROM are reprogrammed. The
Chip Erase command will erase all Flash and EEPROM plus lock bits. If the EESAVE fuse is
programmed, the EEPROM is not erased.
Lock bits are not reset until the program memory has been completely erased. Fuse bits are not
changed.
The Chip Erase command is loaded as follows:
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
B. Load Address Low byte
C. Load Data Low Byte
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Set XA1, XA0 to “10”. This enables command loading
2. Set BS1 to “0”
3. Set DATA to “1000 0000”. This is the command for Chip Erase
4. Give CLKI a positive pulse. This loads the command
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low
6. Wait until RDY/BSY goes high before loading a new command
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give CLKI a positive pulse. This loads the command.
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address low byte (0x00 – 0xFF).
4. Give CLKI a positive pulse. This loads the address low byte.
1. Set XA1, XA0 to “01”. This enables data loading.
2. Set DATA = Data low byte (0x00 – 0xFF).
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
Table 21-1 on page
191. When programming the Flash,
8008G–AVR–04/11
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