PESD3V3L4UF,115 NXP Semiconductors, PESD3V3L4UF,115 Datasheet - Page 4

• Manufacturer Part Number: PESD3V3L4UF,115
• Description: DIODE QUAD ESD PROTECTION 6-XSON
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD3V3L4UF,115

• Package / Case: 6-XSON (Micropak™), SOT-886
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.32V
• Power (watts): 30W
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 12 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 30 W
• Capacitance: 22 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.05 mm W x 1.5 mm L x 0.5 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061194115; PESD3V3L4UF T/R; PESD3V3L4UF T/R

NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 7.
T
[1]
[2]
[3]
Table 8.
Symbol
I
P
Per device
T
T
T
Symbol
Per diode
V
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
ZSM
amb
j
amb
stg
ZSM
ESD
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
Device stressed with ten non-repetitive ESD pulses.
For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
= 25 C unless otherwise specified.
Parameter
electrostatic discharge voltage
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
junction temperature
ambient temperature
storage temperature
Low capacitance unidirectional quadruple ESD protection diode arrays
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
Rev. 04 — 28 February 2008
…continued
Conditions
square wave;
t
square wave;
t
p
p
= 1 ms
= 1 ms
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
PESDxL4UF/G/W
Min
-
-
-
-
[1][2][3]
65
65
Min
-
-
© NXP B.V. 2008. All rights reserved.
Max
0.9
0.8
6
150
+150
+150
Max
20
10
Unit
A
A
W
C
C
C
Unit
kV
kV
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