PESD3V3L4UF,115 NXP Semiconductors, PESD3V3L4UF,115 Datasheet - Page 14

DIODE QUAD ESD PROTECTION 6-XSON

PESD3V3L4UF,115

Manufacturer Part Number
PESD3V3L4UF,115
Description
DIODE QUAD ESD PROTECTION 6-XSON
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PESD3V3L4UF,115

Package / Case
6-XSON (Micropak™), SOT-886
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.32V
Power (watts)
30W
Polarization
4 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
12 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Termination Style
SMD/SMT
Peak Surge Current
3 A
Peak Pulse Power Dissipation
30 W
Capacitance
22 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
1.05 mm W x 1.5 mm L x 0.5 mm H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061194115
PESD3V3L4UF T/R
PESD3V3L4UF T/R
NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Fig 16. Reflow soldering footprint PESDxL4UW (SOT665)
Reflow soldering is the only recommended soldering method.
2.00 1.70 1.00
Low capacitance unidirectional quadruple ESD protection diode arrays
0.075
Rev. 04 — 28 February 2008
0.70
(2 )
solder lands
solder resist
0.45
(2 )
placement area
occupied area
2.45
2.10
1.20
2.20
1.60
PESDxL4UF/G/W
1.375
1.25
Dimensions in mm
0.30
0.375
0.15
(2x)
(2 )
© NXP B.V. 2008. All rights reserved.
0.40
(5 )
0.55
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