PESD3V3L4UF,115 NXP Semiconductors, PESD3V3L4UF,115 Datasheet - Page 11

• Manufacturer Part Number: PESD3V3L4UF,115
• Description: DIODE QUAD ESD PROTECTION 6-XSON
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD3V3L4UF,115

• Package / Case: 6-XSON (Micropak™), SOT-886
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.32V
• Power (watts): 30W
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 12 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 30 W
• Capacitance: 22 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.05 mm W x 1.5 mm L x 0.5 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061194115; PESD3V3L4UF T/R; PESD3V3L4UF T/R

NXP Semiconductors
8. Package outline
PESDXL4UF_G_W_4
Product data sheet
Fig 10. Package outline PESDxL4UF (SOT886)
Fig 12. Package outline PESDxL4UW (SOT665)
Dimensions in mm
1.5
1.4
0.5
0.5
0.40
0.32
3
2
1
1.05
0.95
0.6
0.35
0.27
4
5
6
0.25
0.17
1.7
1.5
Dimensions in mm
1.3
1.1
Low capacitance unidirectional quadruple ESD protection diode arrays
0.50
max
Rev. 04 — 28 February 2008
5
1
04-07-22
0.5
0.04
max
1.7
1.5
1
2
Fig 11. Package outline PESDxL4UG (SOT353/SC-88A)
2.2
2.0
3
4
Dimensions in mm
0.27
0.17
1.35
1.15
0.3
0.1
5
0.6
0.5
1
0.65
0.18
0.08
PESDxL4UF/G/W
04-11-08
1.3
2.2
1.8
2
3
4
0.3
0.2
0.45
0.15
© NXP B.V. 2008. All rights reserved.
0.25
0.10
1.1
0.8
04-11-16
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