NUP1301,215 NXP Semiconductors, NUP1301,215 Datasheet - Page 4

• Manufacturer Part Number: NUP1301,215
• Description: IC DIODE ARRAY ESD SOT23-3
• Manufacturer: NXP Semiconductors

Specifications of NUP1301,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Power (watts): 220W
• Polarization: 2 Channel Array - Unidirectional
• Voltage - Breakdown: 100V
• Voltage - Reverse Standoff (typ): 80V
• Operating Voltage: 1.25 V
• Breakdown Voltage: 100 V
• Capacitance: 0.6 pF
• Termination Style: SMD/SMT
• Power Dissipation Pd: 250 mW
• Operating Temperature Range: - 55 C to + 155 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063605215

NXP Semiconductors
6. Thermal characteristics
NUP1301_1
Product data sheet
Fig 1.
(%)
I
PP
120
80
40
0
0
8/20 s pulse waveform according to
IEC 61000-4-5
10
100 % I
Table 8.
[1]
[2]
Symbol
Per device
R
R
e
th(j-a)
th(j-sp)
PP
t
Single diode loaded.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
; 8 s
20
50 % I
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
PP
30
; 20 s
001aaa630
t ( s)
40
Rev. 01 — 11 May 2009
Fig 2.
Conditions
in free air
100 %
10 %
90 %
ESD pulse waveform according to
IEC 61000-4-2
I
Ultra low capacitance ESD protection array
PP
t
r
30 ns
0.7 ns to 1 ns
[1][2]
Min
-
-
60 ns
Typ
-
-
NUP1301
© NXP B.V. 2009. All rights reserved.
Max
500
360
001aaa631
t
Unit
K/W
K/W
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