PESD5V0V4UF,115 NXP Semiconductors, PESD5V0V4UF,115 Datasheet - Page 7

• Manufacturer Part Number: PESD5V0V4UF,115
• Description: DIODE ESD PROTECT VLOW 6-XSON
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD5V0V4UF,115

• Package / Case: 6-XSON (Micropak™), SOT-886
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.4V
• Power (watts): 16W
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Channels: 4 Channels
• Clamping Voltage: 13 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.8 V
• Peak Surge Current: 1.5 A
• Peak Pulse Power Dissipation: 16 W
• Capacitance: 12 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.05(Max) mm W x 1.5(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4804-2; 934061202115; PESD5V0V4UF T/R; PESD5V0V4UF T/R; PESD5V0V4UF,115

NXP Semiconductors
PESDXV4UF_G_W_3
Product data sheet
Fig 5. Diode capacitance as a function of reverse
Fig 7. V-I characteristics for a unidirectional ESD protection diode
(pF)
(1) PESD3V3V4UF; PESD3V3V4UG; PESD3V3V4UW
(2) PESD5V0V4UF; PESD5V0V4UG; PESD5V0V4UW
C
d
16
14
12
10
8
6
f = 1 MHz; T
voltage; typical values
0
1
amb
= 25 C
2
(1)
(2)
3
V
CL
4
V
006aaa262
V
BR
R
(V)
V
Rev. 03 — 28 January 2008
RWM
5
Very low capacitance quadruple ESD protection diode arrays
P-N
+
Fig 6. Relative variation of reverse leakage current as
I
RM(25 C)
I
I
RM
10
I
I
I
RM
R
10
PP
1
1
a function of junction temperature; typical
values
100
006aaa407
50
PESDxV4UF/G/W
V
0
50
© NXP B.V. 2008. All rights reserved.
100
006aaa263
T
j
( C)
150
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