PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet - Page 3

DIODE DBL ESD PROTECTION SOT663

PESD3V3S2UQ,115

Manufacturer Part Number
PESD3V3S2UQ,115
Description
DIODE DBL ESD PROTECTION SOT663
Manufacturer
NXP Semiconductors
Datasheets

Specifications of PESD3V3S2UQ,115

Package / Case
SOT-663
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.6V
Power (watts)
150W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
8 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Termination Style
SMD/SMT
Peak Surge Current
15 A
Peak Pulse Power Dissipation
150 W
Capacitance
200 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.3 mm W x 1.7 mm L x 0.6 mm H
Operating Temperature Min Deg. C
-65C
Operating Temperature Max Deg. C
150C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4519-2
934057839115
PESD3V3S2UQ T/R
PESD3V3S2UQ T/R
NXP Semiconductors
5. Limiting values
PESDXS2UQ_SER_4
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 6.
T
[1]
[2]
Table 7.
Symbol
Per diode
P
I
Per device
T
T
T
Symbol
Per diode
V
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PP
amb
j
amb
stg
PP
ESD
Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
Measured across either pins 1 and 3 or pins 2 and 3.
Device stressed with ten non-repetitive ESD pulses.
Measured across either pins 1 and 3 or pins 2 and 3.
= 25
°
C unless otherwise specified.
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Parameter
electrostatic discharge
voltage
Limiting values
ESD maximum ratings
ESD standards compliance
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PESDxS2UQ series
Rev. 04 — 26 January 2010
Double ESD protection diodes in SOT663 package
Conditions
t
t
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883
(human body model)
p
p
= 8/20 μs
= 8/20 μs
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
PESDxS2UQ series
[1][2]
[1][2]
[1][2]
Min
-
-
-
-
-
-
-
−65
−65
Min
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
150
15
15
5
5
3
150
+150
+150
Max
30
30
30
30
23
10
Unit
W
A
A
A
A
A
°C
°C
°C
Unit
kV
kV
kV
kV
kV
kV
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