PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet
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PESD3V3S2UQ,115
Specifications of PESD3V3S2UQ,115
934057839115
PESD3V3S2UQ T/R
PESD3V3S2UQ T/R
Related parts for PESD3V3S2UQ,115
PESD3V3S2UQ,115 Summary of contents
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... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
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... NXP Semiconductors Double ESD protection diodes in SOT663 package FEATURES Uni-directional ESD protection two lines Max. peak pulse power 150 Low clamping voltage (CL)R Low reverse leakage current ESD protection > IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge APPLICATIONS Computers and peripherals Communication systems ...
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NXP Semiconductors Double ESD protection diodes in SOT663 package ORDERING INFORMATION TYPE NUMBER NAME PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER P peak pulse power pp I peak pulse ...
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... NXP Semiconductors Double ESD protection diodes in SOT663 package ESD maximum ratings SYMBOL PARAMETER ESD electrostatic discharge capability Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. ESD standards compliance ESD STANDARD IEC 61000-4-2 ...
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... NXP Semiconductors Double ESD protection diodes in SOT663 package ELECTRICAL CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V reverse stand-off voltage RWM PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ I reverse leakage current RM PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ V breakdown voltage BR PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ C diode capacitance ...
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... NXP Semiconductors Double ESD protection diodes in SOT663 package SYMBOL PARAMETER R differential resistance diff PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Notes 1. Non-repetitive current pulse 8/20 s exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. GRAPHICAL DATA ( amb t = 8/20 s exponential decaying waveform; see Fig.2. ...
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... NXP Semiconductors Double ESD protection diodes in SOT663 package 240 C d (pF) 200 160 (1) 120 ( (1) PESD3V3S2UQ 3.3 V. RWM (2) PESD5V0S2UQ RWM MHz. amb Fig.6 Diode capacitance as a function of reverse voltage; typical values. 001aaa727 (pF (V) R (1) PESD12VS2UQ; V (2) PESD15VS2UQ; V (3) PESD24VS2UQ MHz. amb Fig.7 Diode capacitance as a function of reverse voltage ...
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... NXP Semiconductors Double ESD protection diodes in SOT663 package R( 100 (1) PESD3V3S2UQ 3.3 V. RWM (2) PESD5V0S2UQ RWM I is less than 150 C for: R PESD12VS2UQ RWM PESD15VS2UQ RWM PESD24VS2UQ RWM Fig.8 Relative variation of reverse leakage current as a function of junction temperature; typical values. 001aaa729 (1) (2) 100 150 ...
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... NXP Semiconductors Double ESD protection diodes in SOT663 package ESD TESTER note 1 Note 1: IEC61000-4-2 network C = 150 pF 330 Z Z vertical scale = 200 V/div horizontal scale = 50 ns/div GND unclamped 1 kV ESD voltage waveform (IEC61000-4-2 network) GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped 1 kV ESD voltage waveform ...
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... NXP Semiconductors Double ESD protection diodes in SOT663 package APPLICATION INFORMATION The PESDxS2UQ series is designed for uni-directional protection for up to two data lines against damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UQ series may be used on lines where the signal polarities are below ground. PESDxS2UQ series provide a surge capability 150 W (P waveform ...
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... NXP Semiconductors Double ESD protection diodes in SOT663 package PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.33 0.18 1.7 mm 0.5 0.23 0.08 1.5 OUTLINE VERSION IEC SOT663 scale 1.3 1.7 0.3 1.0 0.5 1.1 1.5 ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors Revision history Table 1. Revision history Document ID Release date PESDXS2UQ_SER_N_3 20080911 • Modifications: Asterisks and note 1 removed in Marking Table PESDXS2UQ_SERIES_2 20040427 PESDXS2UQ_SERIES_1 20031215 PESDxS2UQ series Double ESD protection diodes in SOT663 package Data sheet status Change notice Product data sheet - Product specifi ...