PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet - Page 2

DIODE DBL ESD PROTECTION SOT663

PESD3V3S2UQ,115

Manufacturer Part Number
PESD3V3S2UQ,115
Description
DIODE DBL ESD PROTECTION SOT663
Manufacturer
NXP Semiconductors
Datasheets

Specifications of PESD3V3S2UQ,115

Package / Case
SOT-663
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.6V
Power (watts)
150W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
8 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Termination Style
SMD/SMT
Peak Surge Current
15 A
Peak Pulse Power Dissipation
150 W
Capacitance
200 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.3 mm W x 1.7 mm L x 0.6 mm H
Operating Temperature Min Deg. C
-65C
Operating Temperature Max Deg. C
150C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4519-2
934057839115
PESD3V3S2UQ T/R
PESD3V3S2UQ T/R
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PESDXS2UQ_SER_4
Product data sheet
Table 2.
Table 3.
Table 4.
Pin
1
2
3
Type number
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
Type number
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
Description
cathode 1
cathode 2
common anode
Pinning
Ordering information
Marking codes
Package
Name
-
Rev. 04 — 26 January 2010
plastic surface-mounted package; 3 leads
Description
Double ESD protection diodes in SOT663 package
Simplified outline
Marking code
E1
E2
E3
E4
E5
PESDxS2UQ series
1
3
2
Graphic symbol
© NXP B.V. 2010. All rights reserved.
1
3
Version
SOT663
006aaa154
2
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