PESD1CAN,215 NXP Semiconductors, PESD1CAN,215 Datasheet - Page 5

• Manufacturer Part Number: PESD1CAN,215
• Description: DIODE ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD1CAN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 25.4V
• Power (watts): 200W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 40 V
• Operating Voltage: 24 V
• Breakdown Voltage: 27.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 17 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 2.5 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4032-2; 934059097215; PESD1CAN T/R; PESD1CAN T/R

NXP Semiconductors
PESD1CAN_4
Product data sheet
Fig 3. Peak pulse power as a function of exponential
Fig 5. Diode capacitance as a function of reverse
P
(pF)
(W)
C
PP
10
10
10
d
10
20
16
12
8
4
0
4
3
2
T
pulse duration; typical values
f = 1 MHz; T
voltage; typical values
1
0
amb
= 25 C
5
10
amb
= 25 C
10
10
2
15
10
3
20
006aaa257
t
006aaa258
p
V
( s)
R
(V)
Rev. 04 — 15 February 2008
10
25
4
Fig 4. Relative variation of peak pulse power as a
Fig 6. V-I characteristics for a bidirectional ESD
P
PP(25 C)
V
P
CL
PP
1.2
0.8
0.4
V
0
function of junction temperature; typical values
protection diode
BR
0
V
RWM
50
CAN bus ESD protection diode
I
I
RM
PP
100
I
R
I
I
I
RM
R
PP
PESD1CAN
150
© NXP B.V. 2008. All rights reserved.
001aaa193
T
j
( C)
V
RWM
+
200
006aaa676
V
BR
V
5 of 12
CL