PESD1CAN,215 NXP Semiconductors, PESD1CAN,215 Datasheet - Page 3

• Manufacturer Part Number: PESD1CAN,215
• Description: DIODE ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD1CAN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 25.4V
• Power (watts): 200W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 40 V
• Operating Voltage: 24 V
• Breakdown Voltage: 27.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 17 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 2.5 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4032-2; 934059097215; PESD1CAN T/R; PESD1CAN T/R

NXP Semiconductors
PESD1CAN_4
Product data sheet
Fig 1. 8/20 s pulse waveform according to
(%)
I
PP
120
80
40
0
IEC 61000-4-5
0
10
100 % I
Table 6.
[1]
[2]
Table 7.
Symbol
Per diode
V
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
e
ESD
PP
t
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 3 or 2 to 3.
; 8 s
20
50 % I
Parameter
electrostatic discharge voltage
ESD maximum ratings
ESD standards compliance
PP
30
; 20 s
001aaa630
t ( s)
Rev. 04 — 15 February 2008
40
Fig 2. ESD pulse waveform according to
100 %
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
10 %
90 %
IEC 61000-4-2
I
PP
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
t
r
30 ns
0.7 ns to 1 ns
CAN bus ESD protection diode
60 ns
PESD1CAN
[1][2]
Min
-
-
© NXP B.V. 2008. All rights reserved.
001aaa631
Max
23
10
t
Unit
kV
kV
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