MT4LSDT864HG-133G2 Micron Technology Inc, MT4LSDT864HG-133G2 Datasheet - Page 21

• Manufacturer Part Number: MT4LSDT864HG-133G2
• Description: MODULE SDRAM 64MB 144SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4LSDT864HG-133G2

• Memory Type: SDRAM
• Memory Size: 64MB
• Speed: 133MHz
• Package / Case: 144-SODIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 144SODIMM
• Device Core Size: 64b
• Organization: 8Mx64
• Total Density: 64MByte
• Chip Density: 128Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 600mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 144
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 20: Serial Presence-Detect Matrix (Continued)
“1”/”0”: Serial Data, “driven to HIGH”/”driven to LOW”; notes appear at end of Serial Presence-Detect Matrix
NOTE:
09005aef80748a77
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
BYTE DESCRIPTION
65-71 Manufacturer’s JEDEC ID Code (Cont.)
73-90 Module Part Number (ASCII)
95-98 Module Serial Number
99-125 Manufacturer-specific Data (RSVD)
1. The value of
36–
42–
126 System Frequency
127 SDRAM Component & Clock Detail
30
31
32
33
34
35
40
41
61
62
63
64
72
91
92
93
94
Minimum RAS# Pulse Width,
Module Rank Density
Command and Address Setup Time,
Command and Address Hold Time,
Data Signal Input Setup Time,
Data Signal Input Hold Time,
Reserved
Device Minimum Active/Auto-Refresh Time,
Reserved
SPD Revision
Checksum For Bytes 0-62
Manufacturer’s JEDEC ID Code
Manufacturing Location
PCB Identification Code
Identification Code (Cont.)
Year of Manufacture in BCD
Week of Manufacture in BCD
t
RAS used for -13E modules is calculated from
t
t
RAS (See note 1)
DH
t
DS
t
AH,
t
AS,
t
t
CMH
CMS
t
RC
1.5ns (-13E/-133)
0.8ns (-13E/-133)
1.5ns (-13E/-133)
0.8ns (-13E/-133)
(-13E/-133/-10E)
32MB, 64MB,
(VERSION)
45ns (-13E)
50ns (-10E)
66ns (-13E)
71ns (-133)
66ns (-10E)
44ns (133)
or 128MB
2ns (-10E)
1ns (-10E)
2ns (-10E)
1ns (-10E)
MICRON
REV. 2.0
100 MHz
ENTRY
(-13E)
(-133)
(-10E)
1 - 11
1 - 9
21
0
t
RC -
t
RP. Actual device spec. value is 37ns.
32MB, 64MB, 128MB (x64, SR)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT4LSDT464H
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
01 - 0B
01-09
144-PIN SDRAM SODIMM
2D
1A
2C
32
08
15
20
08
10
15
20
08
10
00
3C
42
46
00
02
82
CE
2C
00
64
FF
8F
MT4LSDT864H
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
01 - 0B
01 - 09
©2004 Micron Technology, Inc. All rights reserved.
2D
D7
2C
32
10
15
20
08
10
15
20
08
10
00
3C
42
46
00
02
8B
23
2C
00
64
FF
8F
MT4LSDT1664H
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
01 - 0B
01-09
2D
EA
2C
32
20
15
20
08
10
15
20
08
10
00
3C
42
46
00
02
9E
36
2C
00
64
FF
8F