MT36VDDF25672Y-335F2 Micron Technology Inc, MT36VDDF25672Y-335F2 Datasheet - Page 22

• Manufacturer Part Number: MT36VDDF25672Y-335F2
• Description: MODULE DDR 2GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36VDDF25672Y-335F2

• Memory Type: DDR SDRAM
• Memory Size: 2GB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

pdf: 09005aef80772fd2, source: 09005aef8075ebf6
DDF36C128_256x72G.fm - Rev. D 9/04 EN
22. The valid data window is derived by achieving
23. Each byte lane has a corresponding DQS.
24. This limit is actually a nominal value and does not
25. To maintain a valid level, the transitioning edge of
REFRESH command must be asserted at least
once every 70.3µs; burst refreshing or posting by
the DRAM controller greater than eight refresh
cycles is not allowed.
other specifications:
(
directly porportional with the clock duty cycle
and a practical data valid window can be derived.
The clock is allowed a maximum duty cycle varia-
tion of 45/55, beyond which functionality is
uncertain. Figure 10, Derating Data Valid Window,
shows derating curves for duty cycles ranging
between 50/50 and 45/55.
result in a fail value. CKE is HIGH during
REFRESH command period (
CKE is LOW (i.e., during standby).
the input must:
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
t
QH =
t
50/50
HP -
3.750
2.500
3.400
t
NA
QHS). The data valid window derates
49.5/50.5
3.700
-335
-262/-26A/-265 @
-202 @
-262/-26A/-265 @
3.350
2.463
t
HP (
t
CK = 10ns
Figure 10: Derating Data Valid Window
t
3.650
49/51
CK/2),
2.425
3.300
t
t
CK = 10ns
CK = 7.5ns
t
RFC [MIN]) else
t
DQSQ, and
48.5/52.5
3.600
2.388
3.250
48/52
3.550
t
QH
2.350
3.200
Clock Duty Cycle
22
47.5/53.5
3.500
26. JEDEC specifies CK and CK# input slew rate must
27. DQ and DM input slew rates must not deviate
28. V
29. The clock is allowed up to ±150ps of jitter. Each
2.313
3.150
be 1V/ns (2V/ns differentially).
from DQS by more than 10 percent. If the DQ/
DM/DQS slew rate is less than 0.5V/ns, timing
must be derated: 50ps must be added to
t
slew rate exceeds 4 V/ns, functionality is uncer-
tain. For -335, slew rates must be 0.5 V/ns.
not active while any bank is active.
timing parameter is allowed to vary by the same
amount.
a. Sustain a constant slew rate from the current
b. Reach at least the target AC level.
c. After the AC target level is reached, continue to
DH for each 100 mV/ns reduction in slew rate. If
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
AC level through to the target AC level, V
or V
maintain at least the target DC level, V
or V
47/53
3.450
must not vary more than 4 percent if CKE is
2.275
3.100
IH
IH
1GB, 2GB (x72, ECC, DR)
(AC).
(DC).
46.5/54.5
3.400
184-PIN DDR RDIMM
2.238
3.050
3.350
46/54
©2004 Micron Technology, Inc. All rights reserved.
2.200
3.000
45.5/55.5
3.300
2.163
2.950
t
3.250
DS and
45/55
IL
IL
2.125
2.900
(DC)
(AC)