MT36VDDF25672Y-335F2 Micron Technology Inc, MT36VDDF25672Y-335F2 Datasheet - Page 20

• Manufacturer Part Number: MT36VDDF25672Y-335F2
• Description: MODULE DDR 2GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36VDDF25672Y-335F2

• Memory Type: DDR SDRAM
• Memory Size: 2GB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 14; notes appear following parameter tables; 0°C
pdf: 09005aef80772fd2, source: 09005aef8075ebf6
DDF36C128_256x72G.fm - Rev. D 9/04 EN
AC CHARACTERISTICS
PARAMETER
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (-26A, -265, and -202 Speed Grades) (Continued)
DD
20
SYMBOL
t
t
WPRES
t
t
t
t
t
t
t
t
t
T
t
WPRE
WPST
t
t
t
t
t
XSNR
XSRD
t
t
MRD
MRD
t
RPRE
t
REFC
t
RPST
WTR
QHS
t
IPW
RAS
RAP
t
RCD
RRD
REFI
VTD
A
t
t
RFC
t
NA
WR
QH
IH
RC
IS
IS
RP
F
S
S
+70°C; V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
MIN
t
0.90
0.25
QHS
200
HP -
0.9
0.4
0.4
2.2
t
12
15
40
20
65
75
20
20
15
15
75
QH -
1
1
0
1
0
-26A/-265
DD
= V
1GB, 2GB (x72, ECC, DR)
t
120,000
DQSQ
MAX
0.75
70.3
DD
1.1
0.6
0.6
7.8
Q = +2.5V ±0.2V
184-PIN DDR RDIMM
t
t
MIN
0.25
QHS
200
HP -
1.1
1.1
1.1
0.9
0.4
0.4
2.2
15
16
40
20
70
80
20
20
15
15
t
80
QH -
0
1
0
-202
©2004 Micron Technology, Inc. All rights reserved.
120,000
t
DQSQ
MAX
70.3
1.1
0.6
0.6
7.8
1
UNITS NOTES
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
CK
CK
CK
CK
CK
CK
22, 23
31, 49
18, 19
12
12
12
45
38
38
17
22
21
21