MT8VDDT6464AY-40BF4 Micron Technology Inc, MT8VDDT6464AY-40BF4 Datasheet - Page 21

MODULE DDR SDRAM 512MB 184-DIMM

MT8VDDT6464AY-40BF4

Manufacturer Part Number
MT8VDDT6464AY-40BF4
Description
MODULE DDR SDRAM 512MB 184-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT8VDDT6464AY-40BF4

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1232
MT8VDDT6464AY-40BF4
Table 13:
Table 14:
Figure 10:
PDF: 09005aef80a43556, Source: 09005aef80a43534
DDA8C16_32_64x64AG_2.fm - Rev. E 4/06 EN
Select Code
Memory area select code (two arrays)
Protection register select code
Current address read
Random address read
Sequential read
Byte write
Page write
SDA OUT
SDA IN
Mode
SCL
EEPROM Device Select Code
Most significant bit (b7) is sent first
EEPROM Operating Modes
SPD EEPROM Timing Diagram
t SU:STA
RW Bit
1
0
1
1
0
0
t F
128MB, 256MB, 512MB (x64, SR): PC3200 184-Pin DDR UDIMM
t HD:STA
V
V
V
V
t LOW
t AA
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
t HIGH
t HD:DAT
b7
Bytes
1
0
≤ 16
21
≥ 1
Device Type Identifier
1
1
1
1
t DH
b6
t R
0
1
Initial Sequence
START, device select, RW = “1”
START, device select, RW = “0”, address
reSTART, device select, RW = “1”
Similar to current or random address read
START, device select, RW = “0”
START, device select, RW = “0”
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t SU:DAT
b5
1
1
b4
0
0
Serial Presence-Detect
SA2
SA2
b3
©2005 Micron Technology, Inc. All rights reserved.
Chip Enable
t SU:STO
t BUF
SA1
SA1
b2
UNDEFINED
SA0
SA0
b1
RW
RW
RW
b0

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