MAX5099ATJ+ Maxim Integrated Products, MAX5099ATJ+ Datasheet - Page 2

• Manufacturer Part Number: MAX5099ATJ+
• Description: IC CONV BUCK SYNC DL 32TQFN-EP
• Manufacturer: Maxim Integrated Products
• Type: Step-Down (Buck)r

Specifications of MAX5099ATJ+

• Internal Switch(s): Both
• Synchronous Rectifier: Yes
• Number Of Outputs: 2
• Voltage - Output: 0.8 ~ 17.1 V
• Current - Output: 1A, 2A
• Frequency - Switching: 200kHz ~ 2.2MHz
• Voltage - Input: 4.5 ~ 19 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 32-TQFN Exposed Pad
• Power - Output: 2.76W
• Output Voltage: 5.2 V
• Output Current: 2 A
• Input Voltage: 5.2 V to 19 V
• Supply Current: 4.2 mA
• Switching Frequency: 1.9 MHz
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
V+ to SGND............................................................-0.3V to +25V
V+ to IN_HIGH...........................................................-19V to +6V
IN_HIGH to SGND ..................................................-0.3V to +19V
IN_HIGH Maximum Input Current .......................................60mA
BYPASS to SGND..................................................-0.3V to +2.5V
GATE to V+.............................................................-0.3V to +12V
GATE to SGND .......................................................-0.3V to +36V
SGND to PGND .....................................................-0.3V to +0.3V
V
VDRV to SGND .........................................................-0.3V to +6V
BST1/VDD1, BST2/VDD2, DRAIN_,
ON/OFF to SGND ...............................-0.3V to (IN_HIGH + 0.3V)
BST1/VDD1 to SOURCE1,
SOURCE_ to SGND................................................-0.6V to +25V
EN_ to SGND............................................................-0.3V to +6V
ELECTRICAL CHARACTERISTICS
(VDRV = V
C
T
Dual, 2.2MHz, Automotive Synchronous Buck
Converter with 80V Load-Dump Protection
2
Note 1: Package thermal resistances were obtained using the method described in JEDEC specifications. For detailed information
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
J
SYSTEM SPECIFICATIONS
Input Voltage Range
V+ Operating Supply Current
V+ Standby Supply Current
Efficiency
OVERVOLTAGE PROTECTOR
IN_HIGH Clamp Voltage
IN_HIGH Clamp Load
Regulation
IN_HIGH Supply Current
IN_HIGH Standby Supply
Current
V+ to IN_HIGH Overvoltage
Clamp
L
BYPASS
PGOOD_ to SGND ..............................................-0.3V to +30V
BST2/VDD2 to SOURCE2......................................-0.3V to +6V
= -40°C to +125°C, unless otherwise noted.) (Note 2)
to SGND ..................-0.3V to the Lower of +6V or (V+ + 0.3V)
_______________________________________________________________________________________
on package thermal considerations refer to www.maxim-ic.com/thermal-tutorial.
= 0.22μF (low ESR), C
PARAMETER
L
, V+ = V
L
= IN_HIGH = 5.2V or V+ = IN_HIGH = 5.2V to 19V, EN_ = V
VL
= 4.7μF (ceramic), C
I
IN_HIGHSTBY
SYMBOL
IN_HIGH
I
I
IN_HIGH
V+STBY
V
V+
I
η
OV
Q
V+ = IN_HIGH
V
V
V
V+ = V
V
V
f
I
1mA < I
V
V
V
unconnected, V
V
SW
SINK
L
L
EN_
OUT1
OUT2
EN_
IN_HIGH
ON/OFF
OV
V+
= V+ = IN_HIGH, Figure 6 (Note 3)
unloaded, no switching, V
= 300kHz
= V+ - V
= 0V, PGOOD_ unconnected,
= 10mA
= V
= 1μF (low ESR), C
IN_HIGH
= 5V at 1.5A,
= 3.3V at 0.75A,
SINK
PGOOD_
= 0V , V
= V
< 50mA
IN_HIGH
ON/OFF
CONDITIONS
IN_HIGH
= 14V
PGOOD_
= V
OSC, FSEL_1, COMP_, SYNC,
DL_ to PGND ...........................................-0.3V to (VDRV + 0.3V)
SOURCE1, DRAIN1 Peak Current ..............................5A for 1ms
SOURCE2, DRAIN2 Peak Current ..............................3A for 1ms
V
Continuous Power Dissipation (T
Package Junction-to-Ambient
Package Junction-to-Case
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range ............................-65°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) ................................+300°C
L
FB_ to SGND..............................................-0.3V to (V
SGND Short Circuit ................... Continuous, Internally Limited
Thermal Resistance (θ
Thermal Resistance (θ
, BYPASS to
32-Pin TQFN-EP (derate 34.5mW/°C above +70°C)..2759mW
, I
= 14V
GATE
GATE
= 14V
= V + =
IN_HIGH
= 0V,
V+ = V
V+ = 12V
V+ = 16V
= -1mA
FB_
= 1μF (ceramic), R
= 1V
L
L
= 5.2V
, SYNC = GND, I
JA
JC
) (Note 1).............................29.0°C/W
) (Note 1) ..............................1.7°C/W
MIN
1.20
5.2
4.5
19
A
IN_HIGH
= +70°C)
VL
TYP
0.75
1.85
160
270
4.2
86
85
85
20
= 0mA, PGND = SGND,
7
= 3.9kΩ, R
MAX
2.50
600
5.5
6.0
1.1
19
21
9
OSC
L
UNITS
= 10kΩ,
+ 0.3V)
mA
mA
mV
μA
μA
%
V
V
V