VNQ660SP-E STMicroelectronics, VNQ660SP-E Datasheet - Page 6

• Manufacturer Part Number: VNQ660SP-E
• Description: IC SSR HISIDE QUAD POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ660SP-E

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 40 mOhm
• Current - Peak Output: 10A
• Voltage - Supply: 6 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 10A
• Output Resistance: 0.04ohm
• Input Delay: 40µs
• Output Delay: 40µs
• Supply Voltage Range: 6V To 36V
• Driver Case Style: PowerSO
• Rohs Compliant: Yes
• No. Of Pins: 10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -

Electrical specifications
2
2.1
2.2
6/26
Electrical specifications
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.
Thermal data
Table 4.
1. When mounted on a standard single-sided FR-4 board with 1cm
2. When mounted on a standard single-sided FR-4 board with 6cm
Symbol
Symbol
R
R
- V
E
V
I
I
I
V
T
thj-case
STAT
P
thj-amb
OUT
GND
E
I
MAX
ESD
I
T
CC
IN
stg
R
tot
CC
C
j
Supply voltage
Reverse DC supply voltage
DC output current, per each channel
Reverse DC output current, per each channel
Input current
Status current
DC ground current at T
Electrostatic discharge (human body model: R=1.5K
C = 100pF)
- INPUT
- STATUS
- OUTPUT
- V
Maximum switching energy
(L = 0.38mH; R
Power dissipation at T
Junction operating temperature
Storage temperature
Non repetitive clamping energy at T
Thermal resistance junction-case
Thermal resistance junction-ambient (one chip ON)
Absolute maximum ratings
Thermal data (per island)
CC
L
= 0 ; V
Parameter
C
C
= 25°C
bat
Parameter
< 25°C
= 13.5V; T
C
= 25°C
jstart
= 150ºC; I
2
2
of Cu (at least 35 µm thick).
of Cu (at least 35 µm thick).
L
= 14A)
51.1
1.1
(1)
(1)
Internally limited
Value
- 40 to 150
- 65 to 150
Value
+/- 10
+/- 10
4000
4000
5000
5000
- 0.3
-200
- 15
101
114
150
41
52
33
(2)
(2)
VNQ660SP
°C/W
°C/W
Unit
Unit
mA
mA
mA
mJ
mJ
°C
°C
W
V
V
A
A
V
V
V
V