VNQ660SP-E STMicroelectronics, VNQ660SP-E Datasheet - Page 9

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VNQ660SP-E

Manufacturer Part Number
VNQ660SP-E
Description
IC SSR HISIDE QUAD POWERSO10
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VNQ660SP-E

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
40 mOhm
Current - Peak Output
10A
Voltage - Supply
6 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Device Type
High Side
Module Configuration
High Side
Peak Output Current
10A
Output Resistance
0.04ohm
Input Delay
40µs
Output Delay
40µs
Supply Voltage Range
6V To 36V
Driver Case Style
PowerSO
Rohs Compliant
Yes
No. Of Pins
10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
VNQ660SP
Table 8.
Table 9.
Table 10.
Figure 4.
dV
dV
Symbol
Symbol
V
V
V
Symbol
t
t
STAT
V
IN
OUT
OUT
V
SDL
DOL
I(hyst)
C
V
V
t
t
I
I
OL
ICL
d(on)
d(off)
IH
IL
IH
IL
IN
/dt
/dt
(on)
(off)
Status delay
Openload voltage detection threshold
Openload detection delay at turn-off
Input low level voltage
Input low level current
Input high level voltage
Input high level current
Input hysteresis voltage
Input capacitance
Input clamp voltage
OPENLOAD STATUS TIMING
t
Switching (V
Logic inputs
Openload detection
Status timings
DOL
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
Turn-off voltage slope
Parameter
Parameter
Parameter
CC
= 13V; T
R
(see
R
(see
R
(see
R
(see
t
L
L
L
L
SDL
= 13 channels 1,2,3,4
= 13 channels 1,2,3,4
= 13 channels 1,2,3,4
= 13 channels 1,2,3,4
j
Figure
Figure
Figure
Figure
= 25°C)
Test conditions
Test conditions
V
V
I
5)
5)
5)
5)
I
IN
IN
IN
IN
= -1mA
= 1.25V
= 3.25V
= 1mA
Test conditions
(see
See
V
V
V
V
CC
IN
STAT
IN
Figure
Figure 4
= 18V
= 0V
OVERTEMP STATUS TIMING
4)
t
SDL
Min.
Min.
3.25
0.5
1
6
Electrical specifications
Min. Typ. Max.
1.5
Figure 10
Figure 12
Typ.
- 0.7
Typ.
See
See
6.8
40
40
2.5
Max.
1.25
10
40
Max. Unit
300
t
8
3.5
140
20
SDL
70
Unit
Unit
V/µs
V/µs
µA
µA
pF
µs
µs
µs
µs
V
V
V
V
V
V
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