VNQ660SP-E STMicroelectronics, VNQ660SP-E Datasheet - Page 18

• Manufacturer Part Number: VNQ660SP-E
• Description: IC SSR HISIDE QUAD POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ660SP-E

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 40 mOhm
• Current - Peak Output: 10A
• Voltage - Supply: 6 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 10A
• Output Resistance: 0.04ohm
• Input Delay: 40µs
• Output Delay: 40µs
• Supply Voltage Range: 6V To 36V
• Driver Case Style: PowerSO
• Rohs Compliant: Yes
• No. Of Pins: 10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -

Application information
3.4
Note:
18/26
Maximum demagnetization energy (V
Figure 24. Maximum turn-off current versus load inductance
Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves B and C.
V
IN
C= repetitive pulse at T
I
B= repetitive pulse at T
A = single pulse at T
LMAX (A)
, I
L
100
10
1
0.01
Demagnetization
Jstart
Jstart
Jstart
L
= 150ºC
jstart
= 0
0.1
= 125ºC
= 100ºC
(at beginning of each demagnetization) of every pulse
L (mH)
Demagnetization
1
CC
= 13.5V)
10
B
C
A
Demagnetization
VNQ660SP
100
t