VNQ660SP-E STMicroelectronics, VNQ660SP-E Datasheet - Page 14

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VNQ660SP-E

Manufacturer Part Number
VNQ660SP-E
Description
IC SSR HISIDE QUAD POWERSO10
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VNQ660SP-E

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
40 mOhm
Current - Peak Output
10A
Voltage - Supply
6 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Device Type
High Side
Module Configuration
High Side
Peak Output Current
10A
Output Resistance
0.04ohm
Input Delay
40µs
Output Delay
40µs
Supply Voltage Range
6V To 36V
Driver Case Style
PowerSO
Rohs Compliant
Yes
No. Of Pins
10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Electrical specifications
14/26
Figure 13. I
Figure 15. Input high level
Figure 17. On state resistance vs Tcase
RDS (on) (mOhm)
100
Vih (V)
3.75
3.25
2.75
2.25
Vih (V)
3.75
3.25
2.75
2.25
90
80
70
60
50
40
30
20
10
3.5
2.5
3.5
2.5
0
4
3
2
4
3
2
-50
-50
-50
LIM
-25
-25
-25
Vcc= 9V; 13V; 18V
vs T
I out= 1A
0
0
0
25
25
25
case
50
Tc (ºC )
50
50
Tc (ºC )
Tc (ºC )
75
75
75
100
100
100
125
125
125
150
150
150
175
175
175
Figure 14. On state resistance vs V
Figure 16. Input hysteresis voltage
Figure 18. Input low level
Vihyst (V)
1.4
1.3
1.2
0.9
0.8
0.7
0.6
0.5
1.1
RDS (on) (mOhm)
100
Vil (V)
2.6
2.4
2.2
1.8
1.6
1.4
1.2
90
80
70
60
50
40
30
20
10
1
2
1
0
-50
-50
8
-25
9
-25
I out= 1A
10
0
0
11
25
25
12
13
50
Tc (ºC )
50
Tc (ºC )
Vcc (V)
14
75
75
15
100
100
16
Tc= - 40ºC
Tc= 150ºC
Tc= 25ºC
125
17
125
18
150
150
19
CC
VNQ660SP
175
175
20

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