IRS26310DJPBF International Rectifier, IRS26310DJPBF Datasheet - Page 28

IC DRIVER BRIDGE 3-PHASE 44-PLCC

IRS26310DJPBF

Manufacturer Part Number
IRS26310DJPBF
Description
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Manufacturer
International Rectifier
Datasheet

Specifications of IRS26310DJPBF

Configuration
3 Phase Bridge
Input Type
Non-Inverting
Delay Time
530ns
Current - Peak
200mA
Number Of Configurations
1
Number Of Outputs
3
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
12 V ~ 20 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
44-PLCC (32 Leads)
Peak Output Current
200mA
Input Delay
530ns
Output Delay
530ns
Supply Voltage Range
12V To 20V
Driver Case Style
LCC
No. Of Pins
44
Operating Temperature Range
-40°C To +125°C
Rohs Compliant
Yes
Device Type
High Side / Low Side
Family Hvic
General Purpose HVICs
Channels
6
Topology
Three Phase
Application
General Purpose / Motor Control / PDP
Voffset
600
Io+ (ma)
200
Io- (ma)
350
Shutdown / Reset
Yes
Separate Power And Logic Ground
Yes
Integrated Bootstrap Diode
Yes
Over Current Protection
Yes
Uvlo
Vcc / Vbs
Vbsuv+ / Vccuv+ Min (v)
10.4
Vbsuv+ / Vccuv+ Typ (v)
11.1
Vbsuv+ / Vccuv+ Max (v)
11.6
Vbsuv- / Vccuv- Min (v)
10.2
Vbsuv- / Vccuv- Typ (v)
10.9
Dt / Sdt Min (ns)
190
Dt / Sdt Typ (ns)
290
Dt / Sdt Max (ns)
420
T On Min (ns)
400
T On Typ (ns)
530
T On Max (ns)
750
T Off Min (ns)
400
T Off Typ (ns)
530
T Off Max (ns)
750
Fault Reporting
Yes
Package
44 Lead
Part Status
Active & Preferred
Special Features
DC Bus Sensing with Over Voltage Protection
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRS26310DJPBF
Manufacturer:
International Rectifier
Quantity:
10 000
Part Number:
IRS26310DJPBF
Manufacturer:
IR
Quantity:
8 000
IRS26310DJPbF
Figure 21: Difference between the input pulse and the output pulse
Integrated Bootstrap Functionality
The new IRS26310D family features integrated high-voltage bootstrap MOSFETs that eliminate the need of the
external bootstrap diodes and resistors in many applications.
There is one bootstrap MOSFET for each high-side output channel and it is connected between the V
supply and
CC
its respective floating supply (i.e., V
, V
, V
); see Figure 22 for an illustration of this internal connection.
B1
B2
B3
The integrated bootstrap MOSFET is turned on only during the time when LO is ‘high’, and it has a limited source
current due to R
. The V
voltage will be charged each cycle depending on the on-time of LO and the value of the
BS
BS
C
capacitor, the drain-source (collector-emitter) drop of the external IGBT (or MOSFET), and the low-side free-
BS
wheeling diode drop.
The bootstrap MOSFET of each channel follows the state of the respective low-side output stage (i.e., the bootstrap
MOSFET is ON when LO is high, it is OFF when LO is low), unless the V
voltage is higher than approximately
B
110% of V
. In that case, the bootstrap MOSFET is designed to remain off until V
returns below that threshold; this
CC
B
concept is illustrated in Figure 23.
Figure 22: Internal bootstrap MOSFET connection
Figure 23: Bootstrap MOSFET state diagram
A bootstrap MOSFET is suitable for most of the PWM modulation schemes and can be used either in parallel with
the external bootstrap network (i.e., diode and resistor) or as a replacement of it. The use of the integrated bootstrap
as a replacement of the external bootstrap network may have some limitations. An example of this limitation may
arise when this functionality is used in non-complementary PWM schemes (typically 6-step modulations) and at very
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28

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