PSMN2R0-30BL,118 NXP Semiconductors, PSMN2R0-30BL,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN2R0-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 2.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Factory Pack Quantity: 800

NXP Semiconductors
Table 7.
Tested to JEDEC standards where applicable.
PSMN2R0-30BL
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(S)
g
I
D
fs
220
165
110
100
55
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
10
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
4
3
5
0.5
25
3.5
…continued
50
1
V
GS
(V) =2.5 V
1.5
75
All information provided in this document is subject to legal disclaimers.
003aad257
003aad249
V
DS
I
D
(A)
(V)
Conditions
I
see
I
V
S
S
100
GS
2
Rev. 1 — 20 March 2012
= 25 A; V
= 25 A; dI
Figure 16
= 0 V; V
GS
S
DS
N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK
/dt = -100 A/µs;
= 0 V; T
Fig 6.
Fig 8.
= 15 V
R
(mΩ)
(A)
I
DSon
D
100
80
60
40
20
j
0
8
6
4
2
0
= 25 °C;
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
Drain source on-state resistance as a function
0
0
1
T
j
= 175 °C
5
PSMN2R0-30BL
2
Min
-
-
-
3
25 °C
10
Typ
0.76
49
66
© NXP B.V. 2012. All rights reserved.
V
4
003aad251
003aad254
GS
V
GS
(V)
-
Max
1.2
-
(V)
15
5
Unit
V
ns
nC
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