PSMN2R0-30BL,118 NXP Semiconductors, PSMN2R0-30BL,118 Datasheet - Page 10

• Manufacturer Part Number: PSMN2R0-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 2.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R0-30BL
Product data sheet
Fig 17. Input and reverse transfer capacitances as a function of gate-source voltage; typical values
12000
(pF)
9000
6000
3000
C
0
2.5
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
5
N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK
7.5
V
003aad252
GS
(V)
C
C
iss
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PSMN2R0-30BL
© NXP B.V. 2012. All rights reserved.
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