PSMN2R0-30BL,118 NXP Semiconductors, PSMN2R0-30BL,118 Datasheet - Page 5

• Manufacturer Part Number: PSMN2R0-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 2.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Factory Pack Quantity: 800

NXP Semiconductors
6. Thermal characteristics
Table 6.
PSMN2R0-30BL
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th (j-mb)
10
10
10
10
-1
-2
-3
-4
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
10
-4
All information provided in this document is subject to legal disclaimers.
Conditions
see
maximum foot print; mounted on a
printed circuit board
Rev. 1 — 20 March 2012
10
Figure 4
-3
N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK
10
-2
10
-1
PSMN2R0-30BL
Min
-
-
P
1
Typ
0.41
50
t
p
T
© NXP B.V. 2012. All rights reserved.
t
p
(s)
003aad247
δ =
Max
0.71
-
T
t
p
t
10
Unit
K/W
K/W
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