PSMN2R0-30BL,118 NXP Semiconductors, PSMN2R0-30BL,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN2R0-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 2.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Factory Pack Quantity: 800

NXP Semiconductors
7. Characteristics
Table 7.
Tested to JEDEC standards where applicable.
PSMN2R0-30BL
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state resistance
gate resistance
total gate charge
gate-source charge
pre-threshold gate-source charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
V
see
f = 1 MHz
I
I
see
I
see
I
see
V
T
V
R
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
G(ext)
Rev. 1 — 20 March 2012
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 0 A; V
= 25 A; V
= 25 A; V
= 25 A; V
Figure
Figure 10
Figure 10
Figure 11
Figure
Figure
Figure 11
Figure
Figure
Figure 14
= 30 V; V
= 30 V; V
= 15 V; V
= 15 V; R
= 16 V; V
= -16 V; V
= 4.5 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω
DS
9; see
12; see
12; see
13; see
13; see
DS
DS
DS
DS
DS
DS
N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK
D
D
D
= 0 V; V
D
GS
GS
GS
DS
L
GS
GS
DS
= 25 V; see
= 25 A; T
= 25 A; T
= 25 A; T
= 15 V; V
= 15 V; V
= V
= V
= V
= 25 A; T
Figure 15
= 0.5 Ω; V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
Figure 10
GS
GS
GS
Figure 11
Figure 11
Figure 14
Figure 14
; T
; T
; T
GS
j
j
j
j
j
j
GS
GS
= 10 V
j
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 175 °C;
= 100 °C;
= 25 °C;
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 25 °C;
GS
= 25 °C
= -55 °C
= 25 °C
Figure
= 10 V;
= 4.5 V;
= 4.5 V;
13;
PSMN2R0-30BL
Min
30
27
1.3
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.7
-
-
0.02
-
10
10
2.47
3.4
2.51
1.79
0.78
107
117
55
17
11
6
16
2.6
6810
1410
650
63
125
111
59
© NXP B.V. 2012. All rights reserved.
-
-
-
-
-
-
Max
-
-
2.15
-
2.45
3
70
100
100
2.9
4
2.9
2.1
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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