NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 69

• Manufacturer Part Number: NAND04GW3B2DN6E
• Description: IC FLASH 4GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND04GW3B2DN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND04G-B2D, NAND08G-BxC
14
Note:
Ordering information
Table 34.
1. x16 organization only available for MCP products
Not all combinations are necessarily available. For a list of available devices of for further
information on any aspect of these products, please contact your nearest Numonyx sales
office.
Example:
Device type
NAND flash memory
Density
04G = 4 Gbits
08G = 8 Gbits
Operating voltage
W = V
R = V
Bus width
3 = x8
4 = x16
Family identifier
B = 2112-byte page
Device options
2 = Chip Enable ‘don't care’ enabled
4 = Chip Enable ‘don’t care’ enabled with dual interface
Product version
C= third version (NAND08G-BxC)
D = fourth version (NAND04G-B2D)
Package
N = TSOP48 12 x 20 mm
ZL = ULGA52 12 x 17 x 0.65 mm
Temperature range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
E = RoHS compliant package, standard packing
F = RoHS compliant package, tape and reel packing
DD
DD
(1)
= 1.7 to 1.95 V
= 2.7 to 3.6 V
Ordering information scheme
NAND04GW3B2D N
Ordering information
6
E
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