NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 29

• Manufacturer Part Number: NAND04GW3B2DN6E
• Description: IC FLASH 4GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND04GW3B2DN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND04G-B2D, NAND08G-BxC
Figure 13. Multiplane page program waveform
1. This address scheme refers to x8 devices, remember to use the appropriate scheme for x16 devices.
6.5
CL
RB
W
I/O
AL
R
80h C1
Data
input
RB
I/O
A
Page Program
1
setup code
C2
Copy back program
The copy back program operation is used to copy the data stored in one page and
reprogram it in another page.
The copy back program operation does not require external memory and so the operation is
faster and more efficient because the reading and loading cycles are not required. The
1)
2)
A
80h
80h
The same row address, except for A18, is applied to the two blocks.
Any command between 11h and 81h is prohibited except 70h and FFh.
R1
A
R2
Address inputs
A
A19-A28 = set to 'Low'
A12-A17 = set to 'Low'
A18 = set to 'Low'
A0-A11 = Valid
R3
A
(1024 block)
First plane
Block 2044
Block 2046
Block 0
Block 2
D0
.
.
A
D1
Data input
A
...
Dn
tIPBSY
Confirm
A
code
tIPBSY
11h
11h
11h
Busy
a) Traditional protocol
b) ONFI 1.0 protocol
Multiplane Page
Busy
Program setup
2
code
81h
81h
Address inputs
80h C1
A0-A11 = Valid
A12-A17 = Valid
A18 = set to 'High'
A19-A28 = Valid
Second plane
B
(1024 block)
Block 2045
Block 2047
C2
Block 1
Block 3
B
.
.
R1
Data input
B
R2
(Program Busy time)
B
R3
tBLBH2
Confirm
B
code
10h
10h
D0
Busy
B
D1
Read Status register
B
70h
Device operations
...
(Program Busy time)
Dn
SR0
B
tBLBH2
10h
Busy
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