K4S161622D-TC/L55 SAMSUNG [Samsung semiconductor], K4S161622D-TC/L55 Datasheet - Page 35

• Manufacturer Part Number: K4S161622D-TC/L55
• Description: 512K x 16Bit x 2 Banks Synchronous DRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

DQ
CLOCK
K4S161622D
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length=Full page
A
ADDR
DQM
10
CKE
RAS
CAS
WE
/AP
CS
BA
CL=2
CL=3
*Note :
0
Row Active
(A-Bank)
RAa
RAa
1
1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
3. Burst stop is valid at every burst length.
Both cases are illustrated above timing diagram. See the label 0. 1, 2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of "Full page write burst stop cycle".
2
3
(A-Bank)
Read
CAa
4
5
QAa0 QAa1 QAa2 QAa3 QAa4
6
QAa0 QAa1 QAa2 QAa3 QAa4
7
8
Burst Stop
9
HIGH
10
1
(A-Bank)
Read
CAb
*Note 2
11
2
12
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
13
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
14
15
CMOS SDRAM
16
Precharge
(A-Bank)
17
18
1
: Don't care
19
2