K4S56163LC Samsung semiconductor, K4S56163LC Datasheet - Page 7

• Manufacturer Part Number: K4S56163LC
• Description: 16Mx16 Mobile SDRAM 54CSP
• Manufacturer: Samsung semiconductor

K4S56163LC-R(B)F/R
AC CHARACTERISTICS
Notes :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
Note :
1. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is
potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product c on-
tained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
CLK cycle time
CLK to valid output delay
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
t
SAC
t
t
SHZ
SLZ
C C
O H
C H
CL
SS
SH
Min
7.5
9.5
2.5
2.5
2.5
2.5
2.0
1.0
1
-
-
- 75
1000
Max
5.4
5.4
7
7
-
-
Min
9.5
9.5
2.5
2.5
2.5
1.5
3
3
1
-
-
-1H
1000
Max
7
7
7
7
-
-
Min
9.5
2.5
2.5
2.5
2.5
1.5
12
25
3
3
1
-1L
1000
Max
20
20
7
8
7
8
Min
2.5
2.5
2.5
3.5
3.5
3.5
2.0
15
15
30
1
CMOS SDRAM
Rev. 1.4 Dec. 2002
- 15
1000
Max
24
24
9
9
9
9
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2