K4S56163LC Samsung semiconductor, K4S56163LC Datasheet - Page 5

• Manufacturer Part Number: K4S56163LC
• Description: 16Mx16 Mobile SDRAM 54CSP
• Manufacturer: Samsung semiconductor

K4S56163LC-R(B)F/R
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S56163LC-R(B)F**
4. K4S56163LC-R(B)R**
5. Unless otherwise noted, input swing IeveI is CMOS(V
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
Symbol
I
I
I
I
C C 2
I
CC2
C C 3
I
CC3
I
I
CC2
CC3
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS CKE & CLK
PS CKE & CLK
P
N
P
N
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
t
CKE
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
O
C C D
= 0 mA
= 0 mA
t
= 2CLKs
t
R C
R C
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IH
IL
IL
Test Condition
(max), t
(max), t
/V
CC
CC
IL
SS
= 10ns
= 10ns
=V
V
V
= 0V, T
V
V
IH
IH
DDQ
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
/V
=
=
-R(B)R
-R(B)F
SSQ)
A
TCSR Range
= -25 C to 70 C)
CC
CC
CC
CC
= 10ns
= 10ns
=
=
4 Banks
2 Banks
1 Bank
4 Banks
2 Banks
1 Bank
165
-75
115
75
Max 45 C
500
400
350
360
260
200
-1H
155
70
95
Version
0.5
0.5
15
10
25
25
6
6
150
CMOS SDRAM
-1L
65
95
Max 70 C
Rev. 1.4 Dec. 2002
750
550
420
630
430
300
125
-15
60
85
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
C
Note
1
1
2
3
4