K4S56163LC Samsung semiconductor, K4S56163LC Datasheet - Page 4

• Manufacturer Part Number: K4S56163LC
• Description: 16Mx16 Mobile SDRAM 54CSP
• Manufacturer: Samsung semiconductor

K4S56163LC-R(B)F/R
DC OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Notes :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Recommended operating conditions (Voltage referenced to V
1. V
2. V
3. Any input 0V V
4. Dout is disabled, 0V
CAPACITANCE
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Notes :
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
D Q
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
0
~ DQ
(min) = -1.0V AC. The undershoot voltage duration is
(max) = 3.0V AC.The overshoot voltage duration is 3ns.
Parameter
15
Parameter
DD
supply relative to Vss
IN
(V
Pin
V
D D
DDQ
V
OUT
= 2.5V, T
.
V
DDQ.
A
= 23 C, f = 1MHz, V
Symbol
V
V
V
V
V
V
I
DDQ
D D
O H
OL
LI
I H
IL
Symbol
0.8 x V
C
C
C
V
V
V
C
Symbol
ADD
OUT
CLK
D D
DDQ
IN
IN
T
1.65
Min
-0.3
2.3
-10
, V
I
, V
P
STG
REF
OS
-
D
OUT
DDQ
DDQ
SS
-0.2
3ns.
=0.9V
= 0V, T
A
50 mV)
Min
2.0
2.0
2.0
3.5
= -25 C to 70 C)
Typ
2.5
0
-
-
-
-
-
V
DDQ
-55 ~ +150
-1.0 ~ 3.6
-1.0 ~ 3.6
Max
Max
2.7
2.7
0.3
0.2
10
4.0
4.0
4.0
6.0
Value
-
+ 0.3
50
1
Unit
uA
V
V
V
V
V
V
Unit
CMOS SDRAM
pF
pF
pF
pF
Rev. 1.4 Dec. 2002
I
I
O H
OL
Unit
mA
W
V
V
= -0.1mA
Note
= 0.1mA
C
Note
1
2
3