LH28F800BG Sharp Electrionic Components, LH28F800BG Datasheet - Page 33

• Manufacturer Part Number: LH28F800BG
• Description: 8 M-bit (512 kB x 16) SmartVoltage Flash Memory
• Manufacturer: Sharp Electrionic Components

6.2.6 ALTERNATIVE CE#-CONTROLLED WRITES
NOTES :
1. In systems where CE# defines the write pulse width
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
SYMBOL
SYMBOL
• V
• V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHEL
WLEL
ELEH
PHHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHGL
QVVL
QVPH
AVAV
PHEL
WLEL
ELEH
PHHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHGL
QVVL
QVPH
CC
CC
(within a longer WE# timing waveform), all setup, hold,
and inactive WE# times should be measured relative to
the CE# waveform.
word write.
= 2.7 to 3.6 V, T
= 3.3±0.3 V, T
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
RP# V
V
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
RP# V
V
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
PP
PP
PP
PP
Setup to CE# Going High
Hold from Valid SRD, RY/BY# High
Setup to CE# Going High
Hold from Valid SRD, RY/BY# High
HH
HH
HH
HH
Setup to CE# Going High
Hold from Valid SRD, RY/BY# High
Setup to CE# Going High
Hold from Valid SRD, RY/BY# High
A
= 0 to +70˚C
A
= 0 to +70˚C
PARAMETER
PARAMETER
VERSIONS
VERSIONS
IN
and D
IN
for block erase or
- 33 -
NOTE
NOTE
2, 4
2, 4
2, 4
2, 4
2
2
2
3
3
2
2
2
3
3
4. V
(NOTE 1)
should be held at V
or word write success (SR.1/3/4/5 = 0 : on Boot Blocks,
SR.3/4/5 = 0 : on Parameter Blocks and Main Blocks).
PP
LH28F800BG-L85
LH28F800BG-L85
MIN.
MIN.
120
100
100
100
100
100
70
50
50
25
70
50
50
25
should be held at V
1
0
5
5
0
0
0
0
1
0
5
5
0
0
0
0
MAX.
MAX.
100
100
LH28F800BG-L (FOR SOP)
HH
) until determination of block erase
PPH1/2/3
LH28F800BG-L12
LH28F800BG-L12
MIN.
MIN.
150
100
100
130
100
100
70
50
50
25
70
50
50
25
1
0
5
5
0
0
0
0
1
0
5
5
0
0
0
0
(and if necessary RP#
MAX.
MAX.
100
100
UNIT
UNIT
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns