LH28F800BG Sharp Electrionic Components, LH28F800BG Datasheet - Page 30

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LH28F800BG

Manufacturer Part Number
LH28F800BG
Description
8 M-bit (512 kB x 16) SmartVoltage Flash Memory
Manufacturer
Sharp Electrionic Components
Datasheet

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6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS
NOTES :
1. Read timing characteristics during block erase and word
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
SYMBOL
SYMBOL
• V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
PHHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVPH
AVAV
PHWL
ELWL
WLWH
PHHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVPH
V
CC
CC
write operations are the same as during read-only
operations. Refer to Section 6.2.4 "AC CHARAC-
TERISTICS" for read-only operations.
word write.
= 2.7 to 3.6 V, T
= 3.3±0.3 V, T
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
PP
PP
PP
PP
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High
HH
HH
HH
HH
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High
A
= 0 to +70˚C
A
= 0 to +70
PARAMETER
PARAMETER
VERSIONS
VERSIONS
IN
and D
˚
C
IN
for block erase or
- 30 -
NOTE
NOTE
2, 4
2, 4
2, 4
2, 4
2
2
2
3
3
2
2
2
3
3
4. V
should be held at V
or word write success (SR.1/3/4/5 = 0 : on Boot Blocks,
SR.3/4/5 = 0 : on Parameter Blocks and Main Blocks).
PP
(NOTE 1)
LH28F800BG-L85
LH28F800BG-L85
MIN.
MIN.
120
100
100
100
100
100
10
50
50
50
10
30
10
50
50
50
10
30
1
5
5
0
1
5
5
0
should be held at V
0
0
0
0
MAX.
MAX.
100
100
LH28F800BG-L (FOR SOP)
HH
) until determination of block erase
PPH1/2/3
LH28F800BG-L12
LH28F800BG-L12
MIN.
MIN.
150
100
100
130
100
100
10
50
50
50
10
30
10
50
50
50
10
30
1
5
5
0
0
0
1
5
5
0
0
0
(and if necessary RP#
MAX.
MAX.
100
100
UNIT
UNIT
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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