CM200DY-34A_11 MITSUBISHI [Mitsubishi Electric Semiconductor], CM200DY-34A_11 Datasheet - Page 7

• Manufacturer Part Number: CM200DY-34A_11
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM200DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : June.2011
PERFORMANCE CURVES
100
20
15
10
0.1
10
5
0
1
0
0.1
COLLECTOR-EMITTER VOLTAGE V
GATE CHARGE CHARACTERISTICS
CAPACITANCE CHARACTERISTICS
G-E short-circuited, T
500
GATE CHARGE Q
I
C
1
=200 A, T
(TYPICAL)
(TYPICAL)
V
1000
CC
j
=1000 V
=25 °C
j
G
=25 °C
(nC)
10
V
1500
CC
=800 V
CE
(V)
C
C
C
i e s
o e s
r e s
2000
100
7
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
1000
0.001
0.01
100
0.1
0.00001
10
1
10
REVERSE RECOVERY CHARACTERISTICS
R
0.0001
t h ( j - c ) Q
V
CC
T
EMITTER CURRENT I
=1000 V, V
FREE WHEELING DIODE
j
=25 °C, INDUCTIVE LOAD
=0.063 K/W, R
Single pulse, T
0.001
I
t
r r
r r
(MAXIMUM)
(TYPICAL)
TIME (S)
GE
=±15 V, R
0.01
100
t h ( j - c ) D
C
=25°C
0.1
G
=0.11 K/W
E
=2.4 Ω,
(A)
1
1000
10