CM200DY-34A_11 MITSUBISHI [Mitsubishi Electric Semiconductor], CM200DY-34A_11 Datasheet - Page 3

• Manufacturer Part Number: CM200DY-34A_11
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM200DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : June.2011
RECOMMENDED OPERATING CONDITIONS
CHIP LOCATION (Top view)
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
V
V
R
GEon
C C
G
Symbol
2. Case temperature (T
3. Pulse width and repetition rate should be such that the device junction temperature (T
4. Junction temperature (T
5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.
6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
7. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
mounting
the chips. Refer to the figure of chip location.
The heat sink thermal resistance should measure just under the chips.
side
mounting side
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
mounting
C
side
) and heat sink temperature (T
X
j
) should not increase beyond T
Item
Y
-:Concave
+:Convex
3 mm
Applied across C1-E2
Applied across G1-Es1/G2-Es2
Per switch
s
Tr1/Tr2: IGBT, Di1/Di2: FWDi
) are defined on the each surface (mounting side) of base plate and heat sink just under
j m a x
rating.
3
Conditions
j
) dose not exceed T
Dimension in mm, tolerance: ±1 mm
13.5
Min.
2.4
-
j m a x
rating.
Limits
1000
Typ.
15.0
-
Max.
1100
16.5
24
Unit
V
Ω
V