CM200DY-34A_11 MITSUBISHI [Mitsubishi Electric Semiconductor], CM200DY-34A_11 Datasheet - Page 5

• Manufacturer Part Number: CM200DY-34A_11
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM200DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : June.2011
PERFORMANCE CURVES
400
300
200
100
10
8
6
4
2
0
0
5
0
COLLECTOR-EMITTER VOLTAGE V
T
T
V
j
COLLECTOR-EMITTER SATURATION
j
=25 °C
GE
=25 °C
15 V
GATE-EMITTER VOLTAGE V
=20 V
VOLTAGE CHARACTERISTICS
OUTPUT CHARACTERISTICS
2
10
13 V
(TYPICAL)
(TYPICAL)
4
6
8 V
I
I
I
C
C
C
=200 A
=400 A
=80 A
15
GE
(V)
8
CE
(V)
12 V
10 V
11 V
9 V
10
20
5
4
3
2
1
0
1000
100
0
10
0.5
EMITTER-COLLECTOR VOLTAGE V
V
G-E short-circuited
GE
COLLECTOR-EMITTER SATURATION
=15 V
1.0
FORWARD CHARACTERISTICS
COLLECTOR CURRENT I
VOLTAGE CHARACTERISTICS
100
T
FREE WHEELING DIODE
j
=125 °C
1.5
T
(TYPICAL)
(TYPICAL)
j
=125 °C
2.0
T
200
j
=25 °C
2.5
T
3.0
C
j
300
=25 °C
(A)
EC
3.5
(V)
400
4.0