CM200DY-34A_11 MITSUBISHI [Mitsubishi Electric Semiconductor], CM200DY-34A_11 Datasheet - Page 6

• Manufacturer Part Number: CM200DY-34A_11
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM200DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : June.2011
PERFORMANCE CURVES
1000
100
10
100
1
10
10
10
V
t
d ( o n )
CC
t
t
=1000 V, V
f
r
SWITCHING CHARACTERISTICS
V
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT I
COLLECTOR CURRENT I
INDUCTIVE LOAD, PER PULSE
CC
T
EMITTER CURRENT I
=1000 V, V
j
=125 °C, INDUCTIVE LOAD
GE
HALF-BRIDGE
HALF-BRIDGE
=±15 V, R
(TYPICAL)
(TYPICAL)
GE
100
=±15 V, R
100
G
=2.4 Ω, T
E
G
E
E
E
=2.4 Ω,
t
r r
o n
o f f
d ( o f f )
(A)
C
C
(A)
(A)
j
=125 °C
1000
1000
1000
100
10
6
10000
1000
1000
100
100
10
1
1
V
CC
EXTERNAL GATE RESISTANCE R
EXTERNAL GATE RESISTANCE R
=1000 V, I
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
INDUCTIVE LOAD, PER PULSE
CC
T
j
=1000 V, I
=125 °C, INDUCTIVE LOAD
C
/I
HALF-BRIDGE
HALF-BRIDGE
E
=200 A, V
(TYPICAL)
(TYPICAL)
C
=200 A, V
10
10
GE
=±15 V, T
GE
=±15 V,
t
t
t
E
E
E
t
d ( o n )
d ( o f f )
r
f
j
o n
o f f
r r
=125 °C
G
G
(Ω)
(Ω)
100
100