CY14B104N CYPRESS [Cypress Semiconductor], CY14B104N Datasheet - Page 24

• Manufacturer Part Number: CY14B104N
• Description: 4 Mbit (512K x 8/256K x 16) nvSRAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Document #: 001-07102 Rev. *L
Document Title: CY14B104L/CY14B104N 4 Mbit (512K x 8/256K x 16) nvSRAM
Document Number: 001-07102
Rev.
*K
*J
*L
ECN No.
2600941
2612931
2625431
Submission
12/19/08
11/04/08
11/26/08
Date
GVCH/PYRS
GVCH/DSG
Change
Orig. of
AESA
Removed 15 ns access speed
Updated Logic block diagram
Updated footnote 1
Added footnote 2 and 5
Pin definition: Updated WE, HSB and NC pin description
Page 4:Updated SRAM READ, SRAM WRITE, Autostore operation description
Page 4:Updated Hardware store operation and Hardware RECALL (Power-up)
description
Footnote 1 referenced for Mode selection Table
Page 6:updated Data protection description
Maximum Ratings: Added Max. Accumulated storage time
Changed I
Changed I
Changed I
Updated I
Changed V
Updated footnote 10 and 11
Added footnote 12
Added Data retention and Endurance Table
Updated Input Rise and Fall time in AC test Conditions
Referenced footnote 15 to t
Updated All switching waveforms
Added Figure 10 (SRAM WRITE CYCLE:BHE and BLE controlled)
Changed t
Changed t
Added V
Updated footnote 21
Added footnote 24
Software controlled STORE/RECALL cycle table: Changed t
Changed t
Added t
Changed t
Updated t
Added Truth table for SRAM operations
Updated ordering information and part numbering nomenclature
Removed Preliminary form header.
Changed t
Page 4: Removed the text relating to write requested after HSB goes LOW are
inhibited.
Page 5: modified software store description to indicate no further read/writes
permitted for t
Added parameter t
Updated Figures 11, 12 and 13.
Added t
Removed t
Updated Figure 14;Hardware store cycle
Changed Simtek trademarks to Cypress
DHSB
HLBL
HDIS
CC1,
SS
CC2
CC4
SB
DELAY
STORE
GHAX
HLHX
DELAY
DHSB
CAP
from 70us to 100us
, t
parameter
from 3mA to 5mA
parameter
SS
I
from 6mA to 10mA
from 6mA to 5mA
HHHD
CC3 ,
max value from 82uf to 180uF
to t
to t
parameter
to 20ns, 25ns, 25ns for 15ns, 20ns, 45ns part respectively
to 1us (min) and 70us (max) for all three access time
duration after sixth read cycle.
from 15ms to 8ms
PURHH
PHSB
HA
I
SB
and t
and I
to AutoStore power-Up recall table
LZHSB
Description of Change
OHA
OZ
Test conditions
parameter
parameters
CY14B104L, CY14B104N
AS
to t
Page 24 of 25
SA
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