CY14B104N CYPRESS [Cypress Semiconductor], CY14B104N Datasheet - Page 12

• Manufacturer Part Number: CY14B104N
• Description: 4 Mbit (512K x 8/256K x 16) nvSRAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

AutoStore/Power Up RECALL
Switching Waveforms
Notes
Document #: 001-07102 Rev. *L
t
t
t
V
t
V
t
t
t
20. t
21. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware Store takes place.
22. On a Hardware STORE, Software STORE/RECALL, AutoStore Enable/Disable and AutoStore initiation, SRAM operation continues to be enabled for time t
23. Read and Write cycles are ignored during STORE, RECALL, and while V
24. HSB pin is driven HIGH to V
HRECALL
STORE
DELAY
VCCRISE
HHHD
PURHH
LZHSB
SWITCH
HDIS
HRECALL
Parameters
[13]
[22]
[21]
[20]
starts from the time V
Power Up RECALL Duration
STORE Cycle Duration
Time Allowed to Complete SRAM Cycle
Low Voltage Trigger Level
VCC Rise Time
HSB Output Driver Disable Voltage
HSB High Active Time
HSB Hold Time after Power-Up Recall Start
HSB To Output Active Time
CC
CC
only by internal 100 kΩ resistor, HSB driver is disabled.
rises above V
SWITCH.
Figure 11. AutoStore or Power Up RECALL
Description
CC
is below V
SWITCH.
[23]
CY14B104L/CY14B104N
CY14B104L, CY14B104N
Min
150
70
1
Max
2.65
500
1.9
20
70
8
5
Page 12 of 25
Unit
DELAY
ms
ms
μs
μs
ns
μs
μs
V
V
.
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