RF3158PCBA-41X RFMD [RF Micro Devices], RF3158PCBA-41X Datasheet - Page 12

• Manufacturer Part Number: RF3158PCBA-41X
• Description: QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE
• Manufacturer: RFMD [RF Micro Devices]

RF3158
12 of 26
Note: When V
power. When V
the V
to decrease gain, but in high band, the PA operates with all stages.
MODE
Pin
EDGE
20
22
23
GSM
RAMP
pin to optimize current drain for low or high power ranges. In addition, in 8PSK mode, the first stage of the low band PA is bypassed
MODE
Function
MODE
V
GND
GND
GND
MODE
High
Low
is low (GMSK mode), the voltage on V
is high (8PSK mode), the PA collector voltage is regulated to 3.6V, and the supply for the PA base bias can be adjusted via
FIXED
Ramped burst from Variable Gain Ampli-
BAND_SEL
Description
Ground.
Ground.
Main ground pad in center of part. This pad should be tied to the main
ground plane with as little loss as possible for optimum linearity.
fier or Source (GSM Burst Ramp Con-
trol)
HB_RFIN
LB_RFIN
VMODE
VRAMP
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
TX_EN
VBATT
RF INPUT
Pins 8, 10, 11, 13, 14, 15, 16, 17, 19, 20, 22 are
connected to pin 23 on the module. It is
recommended that these pins be connected to
module ground on the PCB as well.
1
2
3
4
5
7
6
Dual Mode Operation
22
8
RAMP
Note: view from top of part.
is used to regulate the PA collector voltage which directly controls the output
Pin Out
MODULE
GND
23
Analog voltage that proportionally regulates
Analog voltage that proportionally regulates
collector voltage. Controls output power
level. (GSM Burst Ramp Control)
base bias. Controls amplifier bias current.
20
10
19
11
V
RAMP
18
15
12
17
16
14
13
HB_RFOUT
LB_RFOUT
Interface Schematic
Rev A2 DS070615
TX ENABLE
Low (Isolation)
Low (Isolation)
High (Normal)
High (Normal)