RF3158PCBA-41X RFMD [RF Micro Devices], RF3158PCBA-41X Datasheet

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RF3158PCBA-41X

Manufacturer Part Number
RF3158PCBA-41X
Description
QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE
Manufacturer
RFMD [RF Micro Devices]
Datasheet
Applications
Rev A2 DS070615
Features
Linear EDGE and GSM Opera-
tion
PowerStar® GSM/GPRS
Power Control
Digital Band Select Enables a
Single PA Lineup
Single Supply Voltage;
Requires no External Refer-
ence Voltage
Automatic V
cuit avoids Switching Tran-
sients at Low Supply Voltage
Low Power Mode for Reduced
EDGE Current
Analog Bias Control allows
External Optimization of
EDGE Current
Compact 6mmx6mm Pack-
age
Quad-Band GSM/EDGE
Handsets
GSM/EDGE Transmitter Line-
ups
Portable Battery-Powered
Equipment
GSM850/EGSM900/DCS/
PCS Products
GPRS Class 12 Compatible
Products
Mobile EDGE/GPRS Data
Products
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
BATT
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Tracking Cir-
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Product Description
The RF3158 is a high power, dual-mode amplifier module with integrated
power control. The input and output terminals are internally matched to
50Ω. The amplifier devices are manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is
designed to operate either in saturated mode for GMSK signaling or linear
mode for 8PSK signaling. The module is designed to be the final amplifica-
tion stage in a dual-mode GSM/EDGE mobile transmit lineup operating in
the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands
(such as a cellular handset). Band selection is controlled by an input on
the module which selects either the low or high band. The device is pack-
aged on a 6mmx6mm laminate module with a protective plastic over-
mold.
Ordering Information
RF3158
RF3158PCBA-41X
GaAs HBT
GaAs MESFET
InGaP HBT
BAND SEL
HB RFIN
LB RFIN
VMODE
VRAMP
VBATT
TX EN
Optimum Technology Matching® Applied
QUAD-BAND GSM/EDGE/GSM850/EGSM900
1
2
3
4
5
6
7
Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS
Power Amplifier Module
Power Amplifier Module, 5 Piece Sample Pack
Fully Assembled Evaluation Board
SiGe BiCMOS
Si BiCMOS
SiGe HBT
/DCS/PCS POWER AMPLIFIER MODULE
Functional Block Diagram
Integrated Power
Control
Package Style: Module (6mmx6mm)
RoHS Compliant & Pb-Free Product
GaAs pHEMT
Si CMOS
Si BJT
RF3158
18
12
HB RFOUT
LB RFOUT
GaN HEMT
1 of 26

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RF3158PCBA-41X Summary of contents

Page 1

... Ordering Information RF3158 Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack RF3158PCBA-41X Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT SiGe BiCMOS GaAs MESFET Si BiCMOS ...

Page 2

RF3158 Absolute Maximum Ratings Parameter Supply Voltage ( Power Control Voltage (V ) RAMP Band Select TX Enable V MODE RF - Input Power Max Duty Cycle Output Load VSWR Operating Case Temperature Storage Temperature Parameter Min. V ...

Page 3

Parameter Min. RF Impedance LB_RF IN LB_RF OUT HB_RF IN HB_RF OUT Cellular 850MHz Band GMSK Mode Operating Frequency Range 824 Input Power Range, P +1.0 IN Maximum Output Power 34.5 32.5 Power Droop -0.25 Power Control Slope Total Efficiency ...

Page 4

RF3158 Parameter Min. Cellular 850MHz Band 8PSK Mode Operating Frequency Range 824 Maximum Output Power 28.5 Meeting EVM and ACPR Spec- trum 26.5 13.5 Low Power Current Consumption Total Efficiency (PAE) 17 Gain 28.0 Gain Temperature Coefficient EVM RMS ACPR ...

Page 5

Parameter Min. EGSM 900MHz Band GMSK Mode Operating Frequency Range 880 Input Power Range, P +1.0 IN Maximum Output Power 34.5 32.5 Power Droop -0.25 Power Control Slope Total Efficiency (PAE) 47 Output Noise Power Forward Isolation 2f Harmonics 0 ...

Page 6

RF3158 Parameter Min. EGSM 900MHz Band 8PSK Mode Operating Frequency Range 880 Maximum Output Power 28.5 Meeting EVM and ACPR Spec- trum 26.5 13.5 Low Power Current Consumption Total Efficiency (PAE) 16.5 Gain 28.0 Gain Temperature Coefficient EVM RMS ACPR ...

Page 7

Parameter Min. DCS 1800MHz Band GMSK Mode Operating Frequency Range 1710 Input Power Range, P 2.0 IN Maximum Output Power 32 30 Power Droop -0.25 Power Control Slope Total Efficiency (PAE) 45 Output Noise Power Forward Isolation 2f Harmonics 0 ...

Page 8

RF3158 Parameter Min. DCS 1800MHz Band 8PSK Mode Operating Frequency Range 1710 Maximum Output Power 28.0 Meeting EVM and ACPR Spec- trum 26.0 12.5 Low Power Current Consumption Total Efficiency (PAE) 18.5 Gain 32.0 Gain Temperature Coefficient EVM RMS ACPR ...

Page 9

Parameter Min. PCS 1900MHz Band GMSK Mode Operating Frequency Range 1850 Input Power Range, P 2.0 IN Maximum Output Power 32 30 Power Droop -0.25 Power Control Slope Total Efficiency (PAE) 45 Output Noise Power Forward Isolation 2f Harmonics 0 ...

Page 10

RF3158 Parameter Min. PCS 1900MHz Band 8PSK Mode Operating Frequency Range 1850 Maximum Output Power 28.0 Meeting EVM and ACPR Spec- trum 26.0 12.5 Low Power Current Consumption Total Efficiency (PAE) 18.5 Gain 32.0 Gain Temperature Coefficient EVM RMS ACPR ...

Page 11

Pin Function Description 1 HB_RFIN RF input to the high-band PA. There is a 100Ω shunt resistor, before the DC block inside the part, which sets the input impedance for the HB PA. When connected coupled transceiver, ...

Page 12

RF3158 Pin Function Description 20 GND Ground. 22 GND Ground. 23 GND Main ground pad in center of part. This pad should be tied to the main ground plane with as little loss as possible for optimum linearity. MODE V ...

Page 13

Shaded area represents pin 1. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A2 DS070615 Package Drawing 6.00 ± 0.10 6.00 ± 0.10 Dimensions in mm. 5.400 TYP ...

Page 14

RF3158 Overview The RF3158 is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equip- ment, and other applications operating in the 824MHz to 915MHz and 1710MHz to 1910MHz bands. The RF3158 ...

Page 15

GSM applications typically require an input RF drive that is 3dB to 4dB higher than the 1dB compression point. GSM mode involves GMSK modulation, which is a constant envelope modulation and is not sensitive to amplitude non-linearities caused by the ...

Page 16

RF3158 RF3158 power is ramped up and down through the V amplifier stages. The RF signal applied at the RFIN pin must be a constant amplitude signal and should be high enough to sat- urate the amplifier in the GSM ...

Page 17

A large portion of the total current in a linear amplifier is necessary to bias the transistors so that the output remains linear EDGE system where there are a range of output power levels used (PCLs), an amplifier ...

Page 18

RF3158 The V voltage range should be limited to min and max values in the specifications to avoid damage or undesirable opera- RAMP tion. At some voltage below 0.35V, the CMOS controller switches off and turns off the PA. The ...

Page 19

Design Considerations There are several key factors to consider in the implementation of a mobile phone transmitter solution using the RF3158: • System Efficiency The RF output match can be designed to improve system efficiency by presenting a non 50Ω ...

Page 20

RF3158 • Harmonics Harmonics are natural products of high efficiency, saturated power amplifiers. An ideal, class 'E', saturated power ampli- fier will produce a perfect square wave. Looking at the Fourier transform of a square wave reveals high harmonic content. ...

Page 21

DCS/PCS IN BAND SEL TX EN VBATT+ + VMODE VRAMP 850/900 IN *DC blocking capacitor required if Transceiver output is DC coupled. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 ...

Page 22

RF3158 50 Ω μstrip HB RFIN BAND SEL TX EN VBATT μF VMODE R4 0 Ω 0402 VRAMP R5 DNP 0402 LB RFIN 50 Ω μstrip 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical ...

Page 23

Board Thickness 0.046”, Board Material Rogers RO4003, Multi-Layer 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A2 DS070615 Evaluation Board Layout Board Size 2.0” x 2.0” RF3158 23 ...

Page 24

RF3158 Simplified Block Diagram of a Single Band AGC Amplifier VBATT BAND_SEL VMODE TX_EN VRAMP VBATT BAND_SEL VMODE VRAMP TX_EN RFIN 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. ...

Page 25

PCB Surface Finish The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is 3μinch to 8μinch gold over 180μinch nickel. PCB Land Pattern Recommendation PCB land patterns for RFMD components are based on ...

Page 26

RF3158 RoHS* Banned Material Content RoHS Compliant: Package total weight in grams (g): Compliance Date Code: Bill of Materials Revision: Pb Free Category Sub str a ...

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