RF5110GPCBA-410 RFMD [RF Micro Devices], RF5110GPCBA-410 Datasheet

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RF5110GPCBA-410

Manufacturer Part Number
RF5110GPCBA-410
Description
3V GSM POWER AMPLIFIER
Manufacturer
RFMD [RF Micro Devices]
Datasheet
Product Description
The RF5110G is a high-power, high-efficiency power
amplifier module offering high performance in GSM OR
GPRS applications. The device is manufactured on an
advanced GaAs HBT process, and has been designed for
use as the final RF amplifier in GSM hand-held digital cel-
lular equipment and other applications in the 800MHz to
950MHz band. On-board power control provides over
70dB of control range with an analog voltage input, and
provides power down with a logic “low” for standby opera-
tion. The device is self-contained with 50Ω input and the
output can be easily matched to obtain optimum power
and efficiency characteristics. The RF5110G can be used
together with the RF5111 for dual-band operation. The
device is packaged in an ultra-small 3mmx3mmx1mm
plastic package, minimizing the required board space.
Optimum Technology Matching® Applied
Rev A3 060814
Typical Applications
• 3V GSM Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• GPRS Compatible
Si BJT
Si Bi-CMOS
InGaP/HBT
GND1
GND2
VCC1
RF IN
Functional Block Diagram
1
2
3
4
16
5
RoHS & Pb-Free Product
GaAs HBT
SiGe HBT
GaN HEMT
15
6
14
7
0
13
8
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
12
11
10
9
RF OUT
RF OUT
RF OUT
RF OUT
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• FM Radio Applications: 150MHz/220MHz/
450MHz/865MHz/915MHz
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 2.7V to 4.8V Supply Voltage
• +36dBm Output Power at 3.5V
• 32dB Gain with Analog Gain Control
• 57% Efficiency
• 800MHz to 950MHz Operation
• Supports GSM and E-GSM
RF5110G
RF5110GPCBA-410Fully Assembled Evaluation Board
Package Style: QFN, 16-Pin, 3x3
0.15 C B
Shaded lead is pin 1.
2 PLCS
0.15 C A
-A-
2 PLCS
3V GSM Power Amplifier
3.00 SQ.
2.75 SQ.
3V GSM POWER AMPLIFIER
4 PLCS
0.45
0.00
4 PLCS
0.23
0.13
0.60
0.24
TYP
1.37 TYP
-B-
2 PLCS
1.50 TYP
2 PLCS
0.15 C A
0.15 C B
0.50
Dimensions in mm.
RF5110G
0.10 M
0.30
0.18
MAX
12°
C A B
1.00
0.85
0.80
0.65
0.55
0.30
1.65
1.35
http://www.rfmd.com
-C-
SQ.
Fax (336) 664 0454
Tel (336) 664 1233
0.05
0.01
SEATING
PLANE
0.05 C
2-1

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RF5110GPCBA-410 Summary of contents

Page 1

... Operation 12 RF OUT • Supports GSM and E-GSM 11 RF OUT 10 RF OUT Ordering Information 9 RF OUT 8 RF5110G RF5110GPCBA-410Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA RF5110G 3V GSM POWER AMPLIFIER 0. -A- 1.00 2 PLCS 3.00 SQ. 0.85 1.50 TYP ...

Page 2

RF5110G Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (V ) APC1,2 DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Parameter Min. Overall Operating Frequency Range Usable Frequency ...

Page 3

Parameter Min. Power Supply Power Supply Voltage Power Supply Current Rev A3 060814 Specification Typ. Max. 3.5 2.7 4.8 5 200 335 RF5110G Unit Condition V Specifications V Nominal operating limits, P OUT V ...

Page 4

RF5110G Pin Function Description 1 VCC1 Power supply for the pre-amplifier stage and interstage matching. This pin forms the shunt inductance needed for proper tuning of the inter- stage match. Refer to the application schematic for proper configura- tion. Note ...

Page 5

Theory of Operation and Application Information The RF5110G is a three-stage device with 32 dB gain at full power. Therefore, the drive required to fully saturate the out- put is +3dBm. Based upon HBT (Heterojunction Bipolar Transistor) technology, the part ...

Page 6

RF5110G VCC1 5 Ω Ω 1.0 kΩ APC1 PKG BASE 2-6 Internal Schematic VCC2 4.5 pF APC1 VCC 400 Ω GND2 RF OUT APC2 VCC 300 Ω PKG BASE Rev A3 060814 ...

Page 7

VCC1 180 Ω 100 nH 100 pF 0 Ω VCC2 + 3.3 μ Requires layout change to standard evaluation board. 2 C10 and C11 adjacent to ...

Page 8

RF5110G VCC1 330 100 Ω 10 Ω Ferrite VCC2 + 3.3 μ Requires layout change to standard evaluation board. 2-8 Application Schematic 450MHz FM Band VAPC VAPC 10 ...

Page 9

ISM Bands VCC1 180 Ω 10 Ω Ferrite VCC2 + 3.3 μ Rev A3 060814 Application Schematic VAPC VAPC ...

Page 10

RF5110G Evaluation Board Schematic 50 Ω μstrip J3 VAPC VAPC VCC1 C2 C3 C19 Ω μstrip 180 Ω Ω Ferrite ...

Page 11

Evaluation Board Schematic 50 Ω μstrip J3 VAPC VAPC VCC1 C2 C3 C19 Ω μstrip 180 Ω Ω Ferrite 1.6 nH ...

Page 12

RF5110G Board Thickness 0.032”; Board Material FR-4; Multi-Layer 2-12 Evaluation Board Layout Board Size 2.0” x 2.0” Rev A3 060814 ...

Page 13

RF Generator 3dB Pulse Generator Notes about testing the RF5110G The test setup shown above includes two attenuators. The 3dB pad at the input is to minimize the effect on the signal generator as a result of switching the input ...

Page 14

RF5110G P versus V versus Temperature @ 450 MHz OUT APC dBm IN 33.0 32.0 31.0 30.0 29.0 28.0 27.0 26.0 25.0 24.0 23.0 22.0 21.0 20.0 19.0 18.0 17.0 16.0 15.0 1.7 1.8 1.9 2.0 2.1 ...

Page 15

PCB Surface Finish The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is 3μinch to 8μinch gold over 180μinch nickel. PCB Land Pattern Recommendation PCB land patterns are based on IPC-SM-782 standards when ...

Page 16

RF5110G PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around ...

Page 17

Carrier tape basic dimensions are based on EIA481. The pocket is designed to hold the part for shipping and loading onto SMT manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket design can ...

Page 18

RF5110G 2-18 Rev A3 060814 ...

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