qh25f320s33b8 Numonyx, qh25f320s33b8 Datasheet - Page 16

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qh25f320s33b8

Manufacturer Part Number
qh25f320s33b8
Description
Numonyx? Serial Flash Memory S33
Manufacturer
Numonyx
Datasheet
6.0
6.1
Table 6:
6.2
Table 7:
Datasheet
16
Notes:
1.
2.
3.
4.
5.
6.
7.
Note:
1.
Symbol
Symbol
I
I
I
I
I
I
V
I
V
CCS
DPD
CCR
CCB
I
CCP
CCE
V
V
V
LO
LI
LKO
OH
OL
IH
IL
All currents are RMS unless noted. Typical values at typical V
Sampled, not 100% tested.
If V
I
I
I
I
V
periods < 2 ns.
CCS
CCP
CCS
CCR
IL
Input Load Current
Output Leakage Current
V
V
V
Page Program Current
Parameter Block Erase Current
Sector Erase Current
Bulk Erase Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
CC
CC
CC
IN
, I
can undershoot to –1.0 V for periods <2 ns and V
and I
will increase substantially if W# or HOLD# is toggled while in standby mode.
will increase if D is toggled during read.
CC
DC Current Characteristics
> V
CCE
DC Voltage Characteristics
Standby Current
Deep Power-Down Current
Read Current
Lockout Voltage
Electrical Characteristics
DC Current Specifications
DC Voltage Specifications
CC
measured over typical or max times.
DPD
the input load current increases to 10 µA max.
is the average current measured over any 5 ms time interval 5 µs after a S# de-assertion.
Parameter
Parameter
Typ
15
15
18
16
16
16
2
3
5
6
0.7 * V
V
CC
Min
2.0
Max
0
70
70
10
25
45
45
45
±2
±2
4
5
8
0.1
CC
IH
may overshoot to a maximum of V
Unit
mA
mA
mA
mA
mA
μA
μA
μA
μA
CC
, T
V
V
S# = V
S# = V
20 MHz; No Load
33.3 MHz; No Load
50 MHz; No Load
68 MHz; No Load
S# = V
S# = V
S# = V
S# = V
0.3 * V
CC
CC
C
Max
V
0.1
= +25 °C.
= V
= V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
; V
; V
; 256-Byte Page
Max; V
Max; V
IN
IN
Numonyx™ Serial Flash Memory (S33)
Test Conditions
= V
= V
Unit
IN
IN
V
V
V
V
V
CC
CC
= V
= V
or V
or V
CC
CC
V
I
V
I
OL
OH
CC
CC
SS
SS
Test Conditions
or V
or V
CC
= 100 µA
= –100 µA
= V
= V
+1.0 V for
Order Number: 314822-03
SS
SS
CC
CC
Min
Min
December 2007
Notes
Notes
4,6
2,5
2.5
2,5
2.5
1
1
3
4
7

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