m470l2923bn0-ca2 Samsung Semiconductor, Inc., m470l2923bn0-ca2 Datasheet - Page 16

• Manufacturer Part Number: m470l2923bn0-ca2
• Description: Sdram Unbuffered Module Unbuffered Module Based 512mb B-die
• Manufacturer: Samsung Semiconductor, Inc.

15.0 System Notes:
a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2.
b. Pulldown slew rate is measured under the test conditions shown in Figure 3.
c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV)
d. Evaluation conditions
e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and voltage range.
f. Verified under typical conditions for qualification purposes.
g. TSOPII package divices only.
h. Only intended for operation up to 266 Mbps per pin.
i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns as shown in Table 2. The Input slew rate is
j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4. Input slew rate
k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser on the lesser of
m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi tions through the
256MB, 512MB, 1GB Unbuffered SODIMM
For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this
would result in the need for an increase in tDS and tDH of 100 ps.
Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output switching.
Example : For typical slew rate, DQ0 is switching
Typical
Minimum : 70 °C (T Ambient), VDDQ = 2.3V(for DDR266/333) and 2.5V(for DDR400), slow - slow process
Maximum : 0 °C (T Ambient), VDDQ = 2.7V(for DDR266/333) and 2.7V(for DDR400), fast - fast process
For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation.
based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the slew rates determined by either
VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. The delta rise/fall rate is calculated as: {1/(Slew Rate1)} - {1/(Slew Rate2)}
the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter mined by either VIH(ac) to VIL(ac) or
VIH(DC) to VIL(DC), and similarly for rising transitions.
DC region must be monotonic.
: 25 °C (T Ambient), VDDQ = 2.5V(for DDR266/333) and 2.6V(for DDR400), typical process
For minmum slew rate, all DQ bits are switching from either high to low, or low to high.
The remaining DQ bits remain the same as for previous state.
Output
Output
Figure 3 : Pulldown slew rate test load
Figure 2 : Pullup slew rate test load
VSSQ
VDDQ
50
50
Ω
Ω
Test point
Test point
Rev. 1.5 June 2005
DDR SDRAM