mt18hvf25672py-53e Micron Semiconductor Products, mt18hvf25672py-53e Datasheet - Page 2

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mt18hvf25672py-53e

Manufacturer Part Number
mt18hvf25672py-53e
Description
1gb, 2gb X72, Ecc, Sr 240-pin Ddr2 Vlp Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 2:
Table 3:
Table 4:
PDF: 09005aef827840fc/Source: 09005aef826fd98c
HVF18C128_256x72.fm - Rev. A 3/07 EN
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
MT18HVF12872(P)Y-80E__
MT18HVF12872(P)Y-800__
MT18HVF25672(P)Y-80E__
MT18HVF25672(P)Y-800__
MT18HVF25672(P)Y-667__
MT18HVF25672(P)Y-53E__
MT18HVF25672(P)Y-40E__
Part Number
Part Number
Addressing
Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H128M4,
Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H256M4,
Notes:
2
2
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT18HVF25672Y-667E1.
Module
Density
Module
Density
1GB
1GB
2GB
2GB
2GB
2GB
2GB
1
1
2Gb DDR2 SDRAM
1Gb DDR2 SDRAM
Configuration
Configuration
128 Meg x 72
128 Meg x 72
256 Meg x 72
256 Meg x 72
256 Meg x 72
256 Meg x 72
256 Meg x 72
1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
2
Bandwidth
Bandwith
Module
6.4 GB/s
6.4 GB/s
Module
512Mb (128 Meg x 4)
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2K (A0–A9, A11)
16K (A0–A13)
4 (BA0, BA1)
1 (S0#)
1GB
1KB
8K
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
Data Rate
©2007 Micron Technology, Inc. All rights reserved.
1Gb (256 Meg x 4)
8 (BA0, BA1, BA2)
2K (A0–A9, A11)
16K (A0–A13)
1 (S0#)
(CL-
(CL-
2GB
1KB
8K
Latency
Latency
t
t
5-5-5
6-6-6
RCD-
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
Features
RCD-
t
t
RP)
RP)

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