mt18hvf25672py-53e Micron Semiconductor Products, mt18hvf25672py-53e Datasheet - Page 14

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mt18hvf25672py-53e

Manufacturer Part Number
mt18hvf25672py-53e
Description
1gb, 2gb X72, Ecc, Sr 240-pin Ddr2 Vlp Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 16:
PDF: 09005aef827840fc/Source: 09005aef826fd98c
HVF18C128_256x72.fm - Rev. A 3/07 EN
47–61
Byte
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
MIN row precharge time,
MIN row active-to-row active,
MIN RAS#-to-CAS# delay,
MIN active-to-precharge time,
Module rank density
Address and command setup time,
Address and command hold time,
Data/data mask input setup time,
Data/data mask input hold time,
Write recovery time,
WRITE-to-READ command delay,
READ-to-PRECHARGE command delay,
Memory analysis probe
Extension for bytes 41 and 42
MIN active-to-active/refresh time,
MIN AUTO REFRESH-to-ACTIVE/AUTO
REFRESH command period,
SDRAM device MAX cycle time,
SDRAM device MAX DQS–DQ skew time,
t
SDRAM device MAX read data hold skew
factor,
PLL relock time
Optional features, not supported
DQSQ
Serial Presence-Detect Matrix (continued)
t
QHS
Description
t
WR
t
t
RCD
RP
t
RFC
t
t
RRD
RAS
t
CK (MAX)
t
t
DH
WTR
t
t
t
DS
RC
IH
t
IS
b
b
b
1
b
t
RTP
1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
Entry (Version)
14
-80E/-667/-53E
-800/-667/-53E
-800/-667
-53E/-40E
-800/-667
-53E/-40E
-80E/-800
-667/-53E
-80E/-800
-80E/-800
-80E/-800
-667/-53E
-80E/-800
-800/-40E
-800/-667
-53E/-40E
-80E/-800
-80E/-800
1GB, 2GB
15µs
-80E
-80E
-40E
-667
-53E
-40E
-667
-53E
-40E
-40E
-667
-53E
-40E
-80E
-80E
-40E
-667
-53E
-40E
-667
-53E
-40E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3C/–/–
1E/–/–
3C/–
3C/–
1GB
28/–
00/–
2D
3C
32
1E
32
01
17
25
05
12
1E
00
30
39
69
80
14
1E
0F
00
Serial Presence-Detect
©2007 Micron Technology, Inc. All rights reserved.
2GB
3C
3C
3C
3C
2D
2D
3C
3C
2D
32
1E
32
28
02
17
20
25
35
25
27
37
47
05
10
15
12
17
22
27
1E
28
1E
00
36
06
06
39
37
7F
80
14
18
1E
23
1E
22
28
0F
00

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