mt18hvf25672py-53e Micron Semiconductor Products, mt18hvf25672py-53e Datasheet

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mt18hvf25672py-53e

Manufacturer Part Number
mt18hvf25672py-53e
Description
1gb, 2gb X72, Ecc, Sr 240-pin Ddr2 Vlp Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR2 VLP Registered DIMM (RDIMM)
MT18HVF12872(P) – 1GB
MT18HVF25672(P) – 2GB
For component data sheets, refer to Micron's Web site: www.micron.com
Features
• Fits with ATCA form factor
• 240-pin, very low profile registered dual in-line
• Fast data transfer rates: PC2-3200, PC2-4200, or
• 1GB (128 Meg x 72), 2GB (256 Meg x 72)
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• 4n-bit prefetch architecture
• Single rank
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
Table 1:
PDF: 09005aef827840fc/Source: 09005aef826fd98c
HVF18C128_256x72.fm - Rev. A 3/07 EN
memory module (VLP RDIMM)
PC2-5300
operation
DD
DDSPD
Speed
Grade
-80E
-800
-667
-53E
-40E
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
PC2-6400
Industry
PC2-6400
PC2-5300
PC2-4200
PC2-3200
t
CK
CL = 6
800
CL = 5
Data Rate (MT/s)
1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
667
800
667
1
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Parity
• Operating temperature
• Package
• Frequency/CAS latency
• PCB height
PCB height: 17.9mm (0.70in)
CL = 4
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 240-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 17.9mm (0.70in)
533
533
533
533
400
2. CL = CAS (READ) latency; registered mode will
Micron Technology, Inc., reserves the right to change products or specifications without notice.
module offerings.
add one clock cycle to CL.
CL = 3
240-Pin VLP RDIMM (ATCA Form Factor)
400
400
400
A
A
t
1
2
(ns)
12.5
RCD
≤ +85°C)
≤ +70°C)
15
15
15
15
©2007 Micron Technology, Inc. All rights reserved.
(ns)
12.5
t
15
15
15
15
RP
Marking
None
Features
-80E
-800
-667
-53E
-40E
P
Y
I
(ns)
t
55
55
55
55
55
RC

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mt18hvf25672py-53e Summary of contents

Page 1

... For component data sheets, refer to Micron's Web site: www.micron.com Features • Fits with ATCA form factor • 240-pin, very low profile registered dual in-line memory module (VLP RDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, or PC2-5300 • 1GB (128 Meg x 72), 2GB (256 Meg x 72) • ...

Page 2

... Addressing Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 1GB Modules Base device: MT47H128M4, 2 Part Number Module Density MT18HVF12872(P)Y-80E__ MT18HVF12872(P)Y-800__ Table 4: Part Numbers and Timing Parameters – ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 240-Pin VLP RDIMM Front Pin Symbol Pin Symbol Pin DQ19 61 REF DQ0 33 DQ24 63 4 DQ1 34 DQ25 64 ...

Page 4

... CB0–CB7 I/O Check bits. (SSTL_18) SDA I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and (SSTL_18) data into and out of the presence-detect portion of the module Output Parity error found on the address and control bus (open drain) V ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram S0# BA0–BA1/BA2 A0–A13 RAS# CAS# WE# CKE0 ODT0 RESET# PDF: 09005aef827840fc/Source: 09005aef826fd98c HVF18C128_256x72.fm - Rev. A 3/07 EN 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM V ...

Page 6

... DDR2 SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes can be programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 7

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli- ability ...

Page 8

I Specifications DD Table 9: DDR2 I Specifications and Conditions – 1GB DD Values shown for MT47H128M4 DDR2 SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter/Condition Operating one bank ...

Page 9

Table 10: DDR2 I Specifications and Conditions – 2GB DD Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4) component data sheet Parameter/Condition Operating one bank active-precharge current: t ...

Page 10

... Notes: 1. Timing and switching specifications for the register listed above are critical for proper operation of the DDR2 SDRAM registered DIMMs. These are meant subset of the parameters for the specific device used on the module. Detailed information for this regis- ter is available in JEDEC standard JESD82. ...

Page 11

Table 12: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol DC high-level input V IH voltage DC low-level input V IL voltage V Input voltage (limits high-level input V IH voltage V DC low-level input IL voltage ...

Page 12

Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...

Page 13

... Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on SDRAM 4 Number of column addresses on SDRAM 5 DIMM height and module ranks 6 Module data width 7 Reserved 8 Module voltage interface levels t 9 SDRAM cycle time, CK (CL = MAX value, see byte 18) ...

Page 14

... Description 27 MIN row precharge time, 28 MIN row active-to-row active, 29 MIN RAS#-to-CAS# delay, 30 MIN active-to-precharge time, 31 Module rank density 32 Address and command setup time, 33 Address and command hold time, 34 Data/data mask input setup time, 35 Data/data mask input hold time, t ...

Page 15

... SPD revision 63 Checksum for bytes 0–62 ECC/ECC and parity 64 Manufacturer’s JEDEC ID code 65–71 Manufacturer’s JEDEC ID code 72 Manufacturing location 73–90 Module part number (ASCII) 91 PCB identification code 92 Identification code (continued) 93 Year of manufacture in BCD 94 Week of manufacture in BCD 95–98 Module serial number 99– ...

Page 16

... TYP TYP TYP 123.0 (4.84) TYP Back view U16 U18 U19 U17 70.68 (2.78) TYP ® Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 Module Dimensions U10 U11 U12 18.05 (0.711) 17.75 (0.699) 10.0 (0.394) TYP PIN 120 55.0 (2.16) TYP U20 U21 U22 PIN 121 © ...

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